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Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 < |Amial < 25. Zin(mid) 2 50kN, a low 3-dB frequency of fi < 10kHz, and a high 3-dB frequency of fa = 100kHz. Assume Ipss = 12.5mA. Ip = 1mA, and V, = -3.5V To > Rp||RL and Rt > Rp. 100kN. R, 5kN R2 = 500kN, RL fL = 9.9kHz. fc2 = fL/10 C1 = 8nF +Vpp R1 Rp C2 R. M1 RSRI RL vo R2 RSR2 Cs Zin Figure 4

Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 < |Amial < 25. Zin(mid) 2 50kN, a low 3-dB frequency of fi < 10kHz, and a high 3-dB frequency of fa = 100kHz. Assume Ipss = 12.5mA. Ip = 1mA, and V, = -3.5V To > Rp||RL and Rt > Rp. 100kN. R, 5kN R2 = 500kN, RL fL = 9.9kHz. fc2 = fL/10 C1 = 8nF +Vpp R1 Rp C2 R. M1 RSRI RL vo R2 RSR2 Cs Zin Figure 4

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 < |Amia| < 25. Zin(mid) 2 50kl, a low 3-dB frequency of fi < 10kHz, and a high 3-dB frequency of fn = 100KH z. ( Assume 1mA, and V, = -3.5V Ipss = 12.5mA, ID r. > Rp||RL and RL > Rp. 500kN, RL 100kN, R, 5kN R2 fL = 9.9kH z, fc2 = fL/10 C1 = 8nF +VDD R Rp C2 R, M1 RSRI Vo RL R2 RSR2 Cs Zin Figure 4 H
Transcribed Image Text:Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 < |Amia| < 25. Zin(mid) 2 50kl, a low 3-dB frequency of fi < 10kHz, and a high 3-dB frequency of fn = 100KH z. ( Assume 1mA, and V, = -3.5V Ipss = 12.5mA, ID r. > Rp||RL and RL > Rp. 500kN, RL 100kN, R, 5kN R2 fL = 9.9kH z, fc2 = fL/10 C1 = 8nF +VDD R Rp C2 R, M1 RSRI Vo RL R2 RSR2 Cs Zin Figure 4 H
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