Put a check (/) to those properties applicable for polar molecule.1. High boiling point2. Low boiling point_3. High melting point4. Low melting point5. High volatility6. Low volatility7. High vapor pressure_8. Low vapor pressure9. High surface tension10. Low surface tension11. H-bonding & dipole-dipole present12. London dispersion is present

Ina polar molecule, one end of the molecule is slightly positive , while the other end is slightly…

Put a check (/) to those properties applicable for polar molecule. _7. High vapor pressure _1. High boiling point _2. Low boiling point _3. High melting point _4. Low melting point _5. High volatility _6. Low volatility _8. Low vapor pressure _9. High surface tension 10. Low surface tension _11. H-bonding & dipole-dipole present 12. London dispersion is present

Put a check (/) to those properties applicable for polar molecule. _7. High vapor pressure _1. High boiling point _2. Low boiling point _3. High melting point _4. Low melting point _5. High volatility _6. Low volatility _8. Low vapor pressure _9. High surface tension 10. Low surface tension _11. H-bonding & dipole-dipole present 12. London dispersion is present

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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12
31) Band Diagram and Carrier Concentration From the following band diagram of Si a. What are the equilibrium hole and electron concentration, po and no , at 300K? b. What is the doping? Give an example of a doping species? c. Repeat (a and b) for 500K? What is difference at higher temperature? d. Calculate Ef-Ev at 300K if the sample was Ge? What is the main difference?
2. In terms of band diagram, explain the differences between metal, semiconductor, dielectric and superconductor.
3. Draw flat energy band diagrams for silicon doped with 10¹5 arsenic atoms/cm³ at 80 K, 280 K, and 550 K. Show the Fermi level in a band diagram for each temperature value and use the intrinsic Fermi level as the energy reference
1- Write the electronic configuration of the Oxygen 2- What is hybridization in SiCl? The atomic number of Si is 14 3- State and explain the Factors that affecting the ionization energy 4- Is it possible for an orbital to have more than 2 electrons? Why?
4. Calculate the potential energy of the system of Na* and CI ions when they are at a distance of 4Å.
4. What is the average zero point energy of electrons in metals? (Hint: Obtain in terms of the Fermi Energy- use density of states).
2. A silicon p-n step junction diode is doped with No = 10¹6 cm-³ and No = 4 x 1018 cm-³ on the n side and p side, respectively. Calculate the build-in potential, space charge width, and maximum field at zero bias at room temperature.
1. Is a N-type or P-type semiconductor electrically neutral? Why or why not?
[Condensed Matter Physics]
1. Calculate the gram susceptibility using the formulae (equation 3). Assume C = 1.02, m0 = 0.8182 g, m1 = 0. 8717 g, R0 = -36, R1 = 94 and l = 2.0 cm. 2. If the temperature, T = 20oC, calculate the effective magnetic moment (μeff) using the formulae in the notes. 3. Compare the effective magnetic moment (μeff) for your sample with the spin only magnetic moment (μSO), calculated using the number of unpaired electrons on your metal ion (check your UG notes).
3. How many electrons in one bit? Do an order of magnitude estimate of a transistor (say, 5nm long gate, 10nm deep into the silicon, 1um wide. See the illustration above) You may assume each silicon atom contributes one electron.