4 Problem 3 You obviously have to make contact to the Si through a via in an SiO; layer.Suppose the contact resistance Re which is synonymous with re-1 mW-cm² and the via opening is 2 mm by 2 mm.Compute the resultant contact resistance.What processing technique would you suggest to lower this contact resistance?(a)(b)

Given: we have to make contact with the Si through the SiO2 layer given rc= 1m W/cm^2 dimensions…

Problem 3 You obviously have to make contact to the Si through a via in an SiO, layer. Suppose the contact resistance Re which is synonymous with reI mW-cm and the via opening is 2 mm by 2 mm. Compute the resultant contact resistance. What processing technique would you suggest to lower this contact resistance? (a) (b)

Problem 3 You obviously have to make contact to the Si through a via in an SiO, layer. Suppose the contact resistance Re which is synonymous with reI mW-cm and the via opening is 2 mm by 2 mm. Compute the resultant contact resistance. What processing technique would you suggest to lower this contact resistance? (a) (b)

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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