Problem 1 The transistor parameters for the given circuit are β = 100, VBE (on) = 0.7 V, and VA = ∞. Determine the midband gain AvM, corner frequencies fL and fH, and bandwidth BW of the given amplifier. Problem 2 Determine the corner frequencies and limiting horizontal asymptotes of a commonemitter amplifier with an emitter bypass capacitor. For the given circuit, RE = 4 kΩ, RC = 2 kΩ, RS = 0.5 kΩ, CE = 1 μF, V + = 5 V, and V − = −5 V. The transistor parameters are: β = 100, VBE(on) = 0.7 V, and ro = ∞.
Power Amplifier
The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.
Maximum Efficiency Criterion
In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.
Problem 1
The transistor parameters for the given circuit are β = 100, VBE (on) = 0.7 V, and VA = ∞. Determine the midband gain AvM, corner frequencies fL and fH, and bandwidth BW of the given amplifier.
Problem 2
Determine the corner frequencies and limiting horizontal asymptotes of a commonemitter amplifier with an emitter bypass capacitor. For the given circuit, RE = 4 kΩ, RC = 2 kΩ, RS = 0.5 kΩ, CE = 1 μF, V + = 5 V, and V − = −5 V. The transistor parameters are: β = 100, VBE(on) = 0.7 V, and ro = ∞.
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