LAB 5.pdfFileC:/Users/Asus/Desktop/SEMESTER%20SUBJECTS/SEM%20...Not syof 7APRE-LAB CALCULATIONDetermine the small-signal voltage gain, Av of the cireuit in Figure 1. Given forward transferconductance, gm=2000uS.20 V200k2.2k2.2uFA 2.2uFRLHE1kRS50k1kFIGURE 1PROCEDUREPart A: AC Analysisi.Construct the amplifier circuit as shown in Figure 1.ii. Set the signal generator output to 0.5 Vp-p at 5 kHz.. Measure Vinp-p and Voutp-p Determine the gain Av.Part B: Output ImpedanceO lype here to search

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Answered: PRE-LAB CALCULATION Determine the…

PRE-LAB CALCULATION Determine the small-signal voltage gain, Av of the circuit in Figure 1. Given forward transfer conductance, gm=2000uS. 20 V 2.2k 200k< 2.2uF 2.2uF RL HE 1k R V. 50k 1k FIGURE 1

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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The circuit in Figure below is a BJT common collector amplifier. Obtain expressions for both the voltage gain (AV = Vout / Vin) and the current gain (AI = Iout / I in). Assume Vin >> VBE please need steps explanation so I can understand and learn. thanks in advance Please in typing format please
2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V
Q4. For the circuit shown in Figure Q4: i) What is the type of MOSFET and the amplifier configuration? ii) Find the Q-point (Ip and Vps) iii) What is the device transconductance, gm? iv) What are the voltage gain and output voltage? v) Draw the input /output voltage waveforms showing the phase relationship between them. Be sure to label them properly. +20V IDON = 15 mA@ VcsON = 6V VGSTH = 1V 1kQ Rp C2 10M2 Ro1 out Vin 3.3MQ Ra, 47003 Rs 50mV Figure Q4
A current-source bias circuit in the figure below has the following values: VDp = 10 V, Vee = -6 V, and Rg = 10,045,170 ohms. To produce a 13 mA drain current and a 7 V drain voltage, determine the value of Rp in ohms. Vpp Rp Rg RE -VEE
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
A. Determine the VCE transfer as a function of Vi of the circuit in figure 1, (eliminating the zener diode), indicating the different areas of the transistor (Active zone VBE = 0.7v, VCEsaturation = 0.2v, VBSaturation = 0.8v; saturation zone: The transistor has a B = 110 and the reverse saturation current negligible. B. As in section a) with the zener diode, assuming that this is ideal, whose zener voltage is equal to 3.5Volts. R3=8K, R4=9K
Hand Calculation: Since you now have the values of R1 and R2 resistors, obtain numeric value of voltage gain Av=Vo/Vi, and numerical values of input and output resistances Ri and Ro. Note that you need to DC analysis first. Do a hand calculation and calculate the DC collector current or IC. This is needed in order to calculate the small signal parameters gm and rπ and in turn to obtain the Av , Ri and Ro Hence, first perform a DC analysis (use the circuit in Figure 1 and take all capacitors open) and assume your transistor has a β=140.
4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24
(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).
2) Consider an enhancement MOSFET common source amplifier circuit in Figure 2(a). The output characteristic is showed in Figure 2(b). Assume that the circuit is operating in the saturation region and k = 5 mA/V2. It also given that ra = ro = 00, Cgd = 2 pF, Cgs = 4 pF, Cas = 1 pF, Cwi = 4 pF and Cwo = 3pF. a. Using DC load line, prove that Ino = 22.5 mA and VpsQ = 5.5 V for Vaso = 2.5V. (Please attach the characteristic graph provided in your working solution) b. Draw the AC equivalent circuit at mid frequency. c. Estimate the voltage gain Av = Vo /Vi. d. Determine the dominant high cut – off frequency for the circuit. 10 V Rp 100 2 6 MQ C2 ci Rs RL Vo 1002 R: 5002 Rs Vo 14 MQ Cs 100 2 Vs Figure 2(a) 60- 50 30 20 10 9. 10 Figure 2(b) (yu) 4
Q3 Figure 3 shows two current mirrors based on MOSFET. Derive a formula relating the input current Iin to the output current Iout for the current mirror on the left of Figure 3 stating any assumption. (a) (b) Derive the input resistance Rin and output resistance Rout for the circuit on the left of Figure 3. State any assumption. (c) Derive a formula relating lin and Iout for the circuit on the right of Figure 3 assuming that M1 and M2 are identical, and that the length and width of the channel for the transistor M4 are double respect to those of M3. State anv assumption. VDD M3 M4 out Iout M1 M2 M1 M2 Vss = 0 V Vss = 0 V Figure 3