Answered: Phosphorus atoms are to be diffused…

Introduction to Chemical Engineering Thermodynamics

8th Edition

ISBN:9781259696527

Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

Chapter1: Introduction

Section: Chapter Questions

Problem 1.1P

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Phosphorus atoms are to be diffused into a silicon
wafer using both predeposition and drive-in heat treatments; the background
concentration of P in this silicon material is known to be 7.5 x 10^19 atoms/m^3. The
predeposition treatment is to be conducted at 950 degree C for 50 minutes; the
surface concentration of P is to be maintained at a constant level of 2.0 x 10^26 atoms/m^3.
Drive-in diffusion will be carried out at 1200 degree C for a period of 3.0 h.
For the diffusion of P in Si, values of Qd and D0 are 3.40
eV/atom and 1.1 x 10^4 m^2/s, respectively.Determine the value of xj
for the drive-in diffusion treatment. Also for the drive-in
treatment, compute the position x at which the concentration of P atoms
is 10^24 m^3.

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