Order the assumptions and steps according to the sequence used to derive the ideal diffusion current density of a p-n junction. 6. ✓ diffusion current density at the boundaries of the depletion region 5. ✓ the carrier densities at the boundaries are related by the electrostatic potential difference across the junction 3. carrier densities in the neutral regions 4. ✓ carrier densities at the boundaries of the depletion region 1. ✓ steady-state continuity equation 2. low-injection condition

Order the assumptions and steps according to the sequence used to derive the ideal diffusion current density of a p-n junction. 6. ✓ diffusion current density at the boundaries of the depletion region 5. ✓ the carrier densities at the boundaries are related by the electrostatic potential difference across the junction 3. carrier densities in the neutral regions 4. ✓ carrier densities at the boundaries of the depletion region 1. ✓ steady-state continuity equation 2. low-injection condition

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

a) A single-phase uncontrolled bridge rectifier supplies a highly inductive load from a single- phase 50 Hz AC voltage source. By neglecting the effect of line inductance, the rectifier generates average output voltage and current values of 180 V and 6 A, respectively. Due to the highly inductive load, the current waveform is constant and ripple-free. However, when considering a line inductor of 5 mH, the average output current drops by 3%. i) With an aid of a circuit diagram, explain the reason behind the zero voltage across the rectifier's output during the commutation interval. ii) Calculate the commutation angle and the average voltage drop values.
6. Among the following statements about the Schottky junctions and PN-junctions, which statement is correct? ) a) The Scotky junctions are more desired for designing higher breakdown devices compared with PN-junctions b) In PN-junctions, both holes and electrons contribute to the current, while in the Schottky junctions based on N-type semiconductor, only electrons contribute to the current c) In the Schottky junctions based on N-type semiconductor, both the electrons and holes contribute to the electricity d) The switch speed of the device based on PN-junctions is much faster compared with the devices based on Schottky junctions 7. In a solar cell, when the band gap of the semiconductor increase, the short circuit current the open circuit voltage a) Increase, Increase b) Increase, Decrease c) Decrease, Increase d) Decrease, Decrease while
A pn junction has NA >> ND . We expect that: There is no depletion region, since NA * ND. The depletion region is wider in the p-type material than in the n-type material. The depletion region width is equal in the n-type and p-type regions. The depletion region is wider in the n-type material than in the p-type material.
1. Plot the characteristic curve of the zener diode in the reverse-breakdown region from the results obtained in step I of the procedure. 2. Determine the internal resistance r, of the zener diode from your data. Do this calculation only on the straight-line breakdown region of the characteristic curve plotted in step 1 above. 3. Determine the power dissipation in the zener diode for the maximum zener current flowing through it from the obtained data of stepl in the procedure, and compare it with PZM- 4. For the zener diode voltage regulator circuit of Fig.8, sketch the relation between V and I (Vi versus IL). Plot the relation between Is and R. Sketch also the relation between Iz and I. Comment on the resulting curves. 5. Calculate the theoretical minimum value of R1 required for putting the zener diode in the zener breakdown region for the regulator circuit of Fig.8. What value of load resistance results in the maximum zener current? Determine the maximum zener current Izmax) in this…
Solve all parts or will dislike
1. (a) Calculate and plot J-V characteristic for a Si p-n junction diode with series resistance Rs-1.5 Ohms, diode ideal factor n-1.15, donor and acceptor concentrations 5e16 and T-350K. To calculate saturation current density use p-n junction saturation current equation with diffusion coefficient D and diffusion length L (check notes). To calculate D and L. use carrier mobility (electron and hole) u-350 cm^2/(V s) and lifetime t- 300 us. Use the voltage range 0- 3Vand step 0.01V. (b) Calculate forward bias voltage at 0.1 A/cm^2 current density. (c) Calculate current density at 3 V reverse bias. You can use a computer, KaleidaGraph, etc.
TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. The Schottky contact in a metal-semiconductor system occurs when the p-type semiconductor contacts a metal with a higher work function than it.
A particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4 cm³ and N₂ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is p. = 1.1 x 10¹4 cm³. Consider the resistivity of the n-side is 40 0-cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 X 10-¹9 and the electric permittivity of the semiconductor , = 13.1€, with = 8.85 x 10-14 F/cm. Determine the hole mobility in the p-region. Determine the thermal equilibrium electron concentration Determine the intrinsic carrier concentration.
B5
Draw the V-I characteristic curve of a Ge based Zener diode with Zener breakdown voltage (?z=5 ?). Indicate three different regions of the curve. Subject: Electronic devices
24 A 30-volt forward voltage is applied to a silicon diode in series with a load of 3 kf2. Draw the de load line. What is the slope of the line? Solution The value of voltage Vy across diode is given by V, V R Since R and V are fixed values, this equation can by represented by a straight line on V-y characteristics of diode; this is de load line. When /p 0, maximum voltage across the diode V 30 V. This is point B(30, 0). 10 mA 30 V Fig. 2.25 Problem 2.4.
A step p-n junction is made in silicone with the following specifications: The current density for electrons (Jno ) is 15 A / cm?, and the current density for holes (Jpo) is 8 A / cm', electron and hole mobility are 0.1 m:V"is"! and 0.5 m:V-is"- respectively, the hole's diffusion constant (20 cmls), the electron's diffusion constant ( 30 cm ls), the relative permittivity ( E, = 11.7), T, and T, are 2 x 106 and 4 x 105 respectively, the hole's diffusion length equals ( 200um),the electron's diffusion length equals (300lm), and the intrinsic carriers concentration ( n,= 1,5x1010 cm*). Calculate the following: 1- The built-in potential Vp. 2- The concentration of the majority and the minority carriers in both P-and N-regions. 3- The total depletion region width of the junction. 4- The maximum electric field at zero bias and 5V bias.