Now we substitute this expression for AQ = IAt. The current density %3D J=nqvd. If there is more than one type of charge carrier, we simply add current densities for eeach type of charge carrier to find the total curn density. Silicon is doped with aluminum until it has 5.0 x 1023 holes/m its positive charge carriers and almost no free electrons. If the cur
Now we substitute this expression for AQ = IAt. The current density %3D J=nqvd. If there is more than one type of charge carrier, we simply add current densities for eeach type of charge carrier to find the total curn density. Silicon is doped with aluminum until it has 5.0 x 1023 holes/m its positive charge carriers and almost no free electrons. If the cur
College Physics
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Chapter1: Units, Trigonometry. And Vectors
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
Transcribed Image Text:Consider a short cylinder with its axis parallel to the drift velocity. It
has a cross-sectional area A, a length vd At, and a volume Avd At. If there
are n charge carriers per volume, each of charge q, the charge in that
cylinder is
(charge)(carriers/volume)(volume), or
AQ = (q)(n)(Avd At).
Now we substitute this expression for AQ = Iat. The current density is
J=nqvd. If there is more than one type of charge carrier, we simply add the
%3D
current densities for eeach type of charge carrier to find the total current
density. Silicon is doped with aluminum until it has 5.0 x 1023 holes/m3 as
its positive charge carriers and almost no free electrons. If the current
density in the doped silicon is 16.0 A/m- î calculate the drift velocity of the
holes. Use
I and q= 1.6 x10-19C
nq
8.0 x 10-4m/s
5.0 x 10 23m/s
re
2.0 x 10-4m/s
O.
1.6 x 10-19m/s
Expert Solution

Step 1
We consider a short cylinder with an axis parallel to the drift velocity and it has a cross-sectional area A and length vd and a volume Avd
if there are n charge per unit volume, each charge q the change in that cylinder is
Now If there is more than one type of charge carrier, we simply add the current densities for each type of charge carrier to find the total current density.
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