Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one Point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 us. The diffusivity of the minority carriers [cm³/s] at 350 K is..
Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one Point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 us. The diffusivity of the minority carriers [cm³/s] at 350 K is..
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![Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one
Point. An electric field of 50 V/cm is applied across the sample, and the field moves these
minority carriers a distance of 1.2 cm in 100 us. The diffusivity of the minority carriers [cm²/s]
at 350 K is..](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Faca4bd6f-f1a5-495f-b05a-542e8fdd3b85%2F42b5a904-2ee6-4323-b29f-0b09ac52efa1%2Frxli957_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one
Point. An electric field of 50 V/cm is applied across the sample, and the field moves these
minority carriers a distance of 1.2 cm in 100 us. The diffusivity of the minority carriers [cm²/s]
at 350 K is..
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