Metallic aluminum is easily oxidized by oxygen. However, the thin oxide layer formed, protects the rest of the metal from further oxidation. The reaction is as follows: Al (s)02 (g) > Al203 (s) The vapor pressure of the solid aluminum oxide is negligibly small Consider a plate of aluminum 1m x 1m, initially free from any oxide, placed inside a helium-oxygen mixture at 1 atm and 150 °C. At a point 2mm from the surface of the metal, partial pressure of oxygen in helium is 0.21 atm. The oxidation kinetics is considered fast. Diffusivity of the oxygen in helium under the conditions of the problem is 0.75 x 104 m2/s 1- Derive an equation for the flux of oxygen to the surface of the aluminum 2- Determine the rate of formation of oxide on one face the aluminum plate 3- Will gas pressure changes affect the rate of oxidation of the metal? Explain by referring to the flux equation you have derived
Metallic aluminum is easily oxidized by oxygen. However, the thin oxide layer formed, protects the rest of the metal from further oxidation. The reaction is as follows: Al (s)02 (g) > Al203 (s) The vapor pressure of the solid aluminum oxide is negligibly small Consider a plate of aluminum 1m x 1m, initially free from any oxide, placed inside a helium-oxygen mixture at 1 atm and 150 °C. At a point 2mm from the surface of the metal, partial pressure of oxygen in helium is 0.21 atm. The oxidation kinetics is considered fast. Diffusivity of the oxygen in helium under the conditions of the problem is 0.75 x 104 m2/s 1- Derive an equation for the flux of oxygen to the surface of the aluminum 2- Determine the rate of formation of oxide on one face the aluminum plate 3- Will gas pressure changes affect the rate of oxidation of the metal? Explain by referring to the flux equation you have derived
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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