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Match each of the following terms with its be description. DRAM SRAM NV-RAM EPROM A. Uses floating gate technology B. Usually has multiplexed address lines to reduce the number of pins on a package C. Good for cache memory D. Has a battery installed

Match each of the following terms with its be description. DRAM SRAM NV-RAM EPROM A. Uses floating gate technology B. Usually has multiplexed address lines to reduce the number of pins on a package C. Good for cache memory D. Has a battery installed

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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QUESTION 16 Match each of the following terms with its best description. DRAM SRAM NV-RAM EPROM A. Uses floating gate technology B. Usually has multiplexed address lines to reduce the number of pins on a package C. Good for cache memory D. Has a battery installed
Transcribed Image Text:QUESTION 16 Match each of the following terms with its best description. DRAM SRAM NV-RAM EPROM A. Uses floating gate technology B. Usually has multiplexed address lines to reduce the number of pins on a package C. Good for cache memory D. Has a battery installed
QUESTION 17 A DRAM has address pins AO-A9, plus RAS and CAS. How many address locations are in the DRAM? 2^12 = 4K 2^10 = 1K 2^22 = 4M 2^20 = 1M
Transcribed Image Text:QUESTION 17 A DRAM has address pins AO-A9, plus RAS and CAS. How many address locations are in the DRAM? 2^12 = 4K 2^10 = 1K 2^22 = 4M 2^20 = 1M
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