It is desired to form a 0.2 um-deep source-drain diffusion for a transistor using a solid-solubility-Arsenic deposition at 1000C into a water with a bulk or background concentration of 3 X 1016/cm3. At this temperature, the Arsenic surface concentration is 1.05 X 1021/cm3. A. Calculate the Dt product required. B. What is the diffusion time required? Do=0.32 cm2/sec. EA= 3.56 eV

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It is desired to form a 0.2 um-deep source-drain diffusion for a transistor using a solid-solubility-Arsenic deposition at 1000C into a water with a bulk or background concentration of 3 X 1016/cm3. At this temperature, the Arsenic surface concentration is 1.05 X 1021/cm3.

A. Calculate the Dt product required.
B. What is the diffusion time required? Do=0.32 cm2/sec. EA= 3.56 eV

1. It is desired to form a 0.2 um-deep source-drain diffusion for a transistor
using a solid-solubility-Arsenic deposition at 1000°C into a wafer with a bulk
or background concentration of 3 X 1016/cm3. At this temperature, the
Arsenic surface concentration is 1.05 X 1021/cm3.
A. Calculate the Dt product required.
B. What is the diffusion time required? Do= 0.32 cm2/sec. EA = 3.56 eV
Transcribed Image Text:1. It is desired to form a 0.2 um-deep source-drain diffusion for a transistor using a solid-solubility-Arsenic deposition at 1000°C into a wafer with a bulk or background concentration of 3 X 1016/cm3. At this temperature, the Arsenic surface concentration is 1.05 X 1021/cm3. A. Calculate the Dt product required. B. What is the diffusion time required? Do= 0.32 cm2/sec. EA = 3.56 eV
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