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In the three-dimensional view of a silicon n-channel MOS transistor shown below, 6 = 20 nm. The transistor is of width 1µm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and -12 Eo = 8.9 x 10- F/m 1μm

In the three-dimensional view of a silicon n-channel MOS transistor shown below, 6 = 20 nm. The transistor is of width 1µm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and -12 Eo = 8.9 x 10- F/m 1μm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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In the three-dimensional view of a silicon n-channel MOS transistor shown below, S = 20 nm. The transistor is of width 1μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and 0 = 8.9 × 10-¹2 F/m 0.2μm 0.2μm p substrate B G 1nm 8 S 0.2μm 1um 0.2μm The gate- source overlap capacitance is approximately. 1um
Transcribed Image Text:In the three-dimensional view of a silicon n-channel MOS transistor shown below, S = 20 nm. The transistor is of width 1μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and 0 = 8.9 × 10-¹2 F/m 0.2μm 0.2μm p substrate B G 1nm 8 S 0.2μm 1um 0.2μm The gate- source overlap capacitance is approximately. 1um
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