In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?p
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?p
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Question
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz.
a) Find the total capacitor effect for the case where gm> > wCμ.
(Cpi) + (Cμ) = ?pF
![B
E
B'
C₂
C₂
Şekil 1a:
8m V
im
C
DYNAMIC CHARACTERISTICS
Transition Frequency
E
NPN SILICON PLANAR SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS (Ta-25°C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
fr Ic=20mA
f-100MHz
Şekil 1c:
A
250
0 dB
(dB)
2221
"
#
2N2221
2N2222
2222
MIN MAX MIN MAX
250
23 dB
-6 dB/octave
Şekil 1b:
UNIT
MHz
APY
(log scale)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Faef88f62-0df1-4d8b-9d02-ccba9a0dc462%2F5c9f0cd3-3850-455a-b52e-a14853d5b70e%2F6hjzzsj_processed.jpeg&w=3840&q=75)
Transcribed Image Text:B
E
B'
C₂
C₂
Şekil 1a:
8m V
im
C
DYNAMIC CHARACTERISTICS
Transition Frequency
E
NPN SILICON PLANAR SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS (Ta-25°C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
fr Ic=20mA
f-100MHz
Şekil 1c:
A
250
0 dB
(dB)
2221
"
#
2N2221
2N2222
2222
MIN MAX MIN MAX
250
23 dB
-6 dB/octave
Şekil 1b:
UNIT
MHz
APY
(log scale)
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