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In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage when the drain voltage vd is 1.0 is 0.22v, obtain the drain driven barrier lowering (DIBL) of this device.

In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage when the drain voltage vd is 1.0 is 0.22v, obtain the drain driven barrier lowering (DIBL) of this device.

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In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage when the drain voltage vd is 1.0 is 0.22v, obtain the drain driven barrier lowering (DIBL) of this device.
Transcribed Image Text:In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage when the drain voltage vd is 1.0 is 0.22v, obtain the drain driven barrier lowering (DIBL) of this device.
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