In a very high quality homo-junction pn LED made of a direct band gap semiconductor, the internally generated power is 3 pW with the internally emitted photons of wavelength = 0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: O a. 1.255e-6 A O b. 7.980e-6 A O c. 4.800e-5 A O d. 1.890e-4 A O e. 1.590e-5 A

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In a very high quality homo-junction pn LED made of a direct band gap semiconductor, the
internally generated power is 3 µW with the internally emitted photons of wavelength -
0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The
device electron current will be:
O a. 1.255e-6 A
O b. 7.980e-6 A
O c. 4.800e-5 A
O d. 1.890e-4 A
e. 1.590e-5 A
Transcribed Image Text:In a very high quality homo-junction pn LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength - 0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: O a. 1.255e-6 A O b. 7.980e-6 A O c. 4.800e-5 A O d. 1.890e-4 A e. 1.590e-5 A
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
h
6.63 x 10-34 J.s
Si
Ge
m.
9.11 x 10-31 Kg
Eg (eV)
п, (ст-3)
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m, /m.
E, (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
Eo
8.85 x 10-12 F/m
450
1900
400
1.05 x 10-34 J – s
2.78 x 1019
1.04 x 1019 4.45 x 1017
K
8.6 x 10-5 eV|K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
26 mV (T = 300 K)
0.082
0.98
0.067
26 meV (T = 300 K)
3 x 108 m/s
KT
0.28
0.49
0.45
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
E9ALGA1- As (x) = 1.424 + 1.247x
EgIn.Ga1-rAs (x) = 0.36 + 1.064x
1 eV = 1.602 × 10¬19 J
1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 x 10-34 J.s Si Ge m. 9.11 x 10-31 Kg Eg (eV) п, (ст-3) Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m, /m. E, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 1500 3900 8500 Eo 8.85 x 10-12 F/m 450 1900 400 1.05 x 10-34 J – s 2.78 x 1019 1.04 x 1019 4.45 x 1017 K 8.6 x 10-5 eV|K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q 26 mV (T = 300 K) 0.082 0.98 0.067 26 meV (T = 300 K) 3 x 108 m/s KT 0.28 0.49 0.45 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations E9ALGA1- As (x) = 1.424 + 1.247x EgIn.Ga1-rAs (x) = 0.36 + 1.064x 1 eV = 1.602 × 10¬19 J 1 KG = 1 x 10-5 Wb/cm2
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