In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV. What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25 deg C?

In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV. What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25 deg C?

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Question

In a phosphorous-doped (n-type) silicon, the Fermi level is shifted upward 0.1 eV.

What is the probability of an electron's being thermally promoted to the conduction band in silicon (Eg = 1.107 eV at 25°C)?

Your answer must be to 2 significant figures or will be marked wrong.

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The Fermi energy for copper is EF = 7.00 eV. For copper at T = 1020 K, (a) find the energy of the energy level whose probability of being occupied by an electron is 0.911. For this energy, evaluate (b) the density of states N(E) and (c) the density of occupied states No(E).
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