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If we want to design a bipolar transistor with 5 GHz cutoff frequency fr, what will the neutral base width W [thickness] be? Assume D, is 10 cm²/s and neglect the emitter and collector delays.

If we want to design a bipolar transistor with 5 GHz cutoff frequency fr, what will the neutral base width W [thickness] be? Assume D, is 10 cm²/s and neglect the emitter and collector delays.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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**Designing a Bipolar Transistor for 5 GHz Cutoff Frequency** In order to design a bipolar transistor with a cutoff frequency of 5 GHz (\(f_T\)), it is essential to determine the appropriate neutral base width (\(W\)) or thickness. For this design, let's assume the diffusion coefficient (\(D_p\)) is \(10 \, \text{cm}^2/\text{s}\), and consider that both emitter and collector delays are negligible. --- ### Key Considerations: - **Cutoff Frequency (\(f_T\))**: The frequency at which the current gain of the transistor falls to one. For this scenario, it is specified to be 5 GHz. - **Diffusion Coefficient (\(D_p\))**: Indicates how fast holes diffuse through the base. Given as \(10 \, \text{cm}^2/\text{s}\). - **Neutral Base Width (\(W\))**: The thickness of the base that needs to be calculated based on the given parameters. - **Emitter and Collector Delays**: For simplicity, these delays are considered negligible in this calculation. Through appropriate calculations following semiconductor physics principles, one can derive the exact base width required for achieving the specified cutoff frequency without accounting for emitter and collector delays.
Transcribed Image Text:**Designing a Bipolar Transistor for 5 GHz Cutoff Frequency** In order to design a bipolar transistor with a cutoff frequency of 5 GHz (\(f_T\)), it is essential to determine the appropriate neutral base width (\(W\)) or thickness. For this design, let's assume the diffusion coefficient (\(D_p\)) is \(10 \, \text{cm}^2/\text{s}\), and consider that both emitter and collector delays are negligible. --- ### Key Considerations: - **Cutoff Frequency (\(f_T\))**: The frequency at which the current gain of the transistor falls to one. For this scenario, it is specified to be 5 GHz. - **Diffusion Coefficient (\(D_p\))**: Indicates how fast holes diffuse through the base. Given as \(10 \, \text{cm}^2/\text{s}\). - **Neutral Base Width (\(W\))**: The thickness of the base that needs to be calculated based on the given parameters. - **Emitter and Collector Delays**: For simplicity, these delays are considered negligible in this calculation. Through appropriate calculations following semiconductor physics principles, one can derive the exact base width required for achieving the specified cutoff frequency without accounting for emitter and collector delays.
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