9. If a 125 mm diameter wafer is exposed for 1 minute to an air stream under a laminar-flow condition at 30m/min, how many dust particles will land on the wafer in a class-10 clean room? For a class-10 clean room,there are 350 particles (0.5 µm or larger) per cubic meter.10. The killing defect density is responsible for yield loss and depends on the design rule or size of the device on achip. This is because when the design rule becomes smaller, a smaller particle can contribute to yield loss. Fora 16M DRAM chip, the design rule is 0.5 µm, the chip size is 1.4 cm², and the killing defect size is 0.18 µm.Due to contamination that occurs in a cleanroom, the wafer defect density measured at size 0.3 µm increasesfivefold from 0.2 D/cm² to 1.0 D/cm². Using the relationship Y = e-DA where D is the defect density and A isthe chip area, calculate the yield loss of a 16M DRAM wafer due to the increase in the defect density assumingthat the defect density is roughly inversely proportional to the defect size to the second power. cm³, respectively.5. The electron densities in RIE and HDP systems range between 10%-10¹0 and 10¹Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate theionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is theratio of the electron density to the density of molecules.6. For a boron diffusion in silicon at 1000°C, the surface concentration is maintained at 1019 cm-3 and thediffusion time is 1 h. If the diffusion coefficient of boron at 1000°C is 2x×10¹4 cm²/s, find Q(t) and the gradientat x = 0 and at a location where the dopant concentration reaches 10¹5 cm ³.

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If a 125 mm diameter wafer is exposed for 1 minute to an air stream under a laminar-flow condition at 30 m/min, how many dust particles will land on the wafer in a class-10 clean room? For a class-10 clean room, there are 350 particles (0.5 µm or larger) per cubic meter. ). The killing defect density is responsible for yield loss and depends on the design rule or size of the device on a chip. This is because when the design rule becomes smaller, a smaller particle can contribute to yield loss. For a 16M DRAM chip, the design rule is 0.5 µm, the chip size is 1.4 cm², and the killing defect size is 0.18 µm. Due to contamination that occurs in a cleanroom, the wafer defect density measured at size 0.3 um increases

If a 125 mm diameter wafer is exposed for 1 minute to an air stream under a laminar-flow condition at 30 m/min, how many dust particles will land on the wafer in a class-10 clean room? For a class-10 clean room, there are 350 particles (0.5 µm or larger) per cubic meter. ). The killing defect density is responsible for yield loss and depends on the design rule or size of the device on a chip. This is because when the design rule becomes smaller, a smaller particle can contribute to yield loss. For a 16M DRAM chip, the design rule is 0.5 µm, the chip size is 1.4 cm², and the killing defect size is 0.18 µm. Due to contamination that occurs in a cleanroom, the wafer defect density measured at size 0.3 um increases

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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