Ic(mA) 110 µA 100 μΑ. 190 μΑ 10 80 μΑ 70 μΑ 60 μΑ 50 μΑ 61 40 μΑ. 30 μΑ 20 μΑ 3 10 HA 10 15 20 25 30 VCE C 2.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Given the BJT transistor characteristics of Fig. 4.121 :

g. Sketch the resulting fixed-bias configuration.
h. What is the dc power dissipated by the device at the operating point?
i. What is the power supplied by VCC ?

A Ic(mA)
110 µA
100 μΑ.
90 µA
10
80 μΑ
70 μΑ
60 µA
7
50 μΑ
40 μΑΓ
5
30 μ.ΑΕ
4
20 µA
10 µA
Ig = 0 µA
5
10
15
20
25
30
VCE (V)
INI
..-----
3.
Transcribed Image Text:A Ic(mA) 110 µA 100 μΑ. 90 µA 10 80 μΑ 70 μΑ 60 µA 7 50 μΑ 40 μΑΓ 5 30 μ.ΑΕ 4 20 µA 10 µA Ig = 0 µA 5 10 15 20 25 30 VCE (V) INI ..----- 3.
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