I - Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGS=5V , VDD=12V ( gm=4500μS ).
I - Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGS=5V , VDD=12V ( gm=4500μS ).
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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I - Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGS=5V , VDD=12V ( gm=4500μS ).
II - A JFET datasheet gives VGS(OFF) = -4V and IDSS = 5 mA. Determine the values of ID for VGS from 0 V to -5V in 1V steps. Plot the transfer curve from these data on a graph sheet.

Transcribed Image Text:III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source
resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain
power supply (VDD) = 3 volts.
(a) Draw the load line over the l-V characteristics shown immediately below..
(b) What is the slope of the resistive load line?
Vop -3 volts
6 mA
5 mA
R.
4 mA
3 mA
2 mA
1 mA
4 V
5 V
Vps
1v
IV) Find the Q point of JFET circuit ( graphically )
-5 mA
oss-
VoD
+6 V
R
K20 2
Ra
10 MO
330 0
-Vos
3.5V
Vem
V-. From the circuit of common source JFET amplifier shown in the figure,
its has VGs(off) = -2.0V,
Voo
Ipss = 1.4mA. If you need this amplifier to be biased
with Ip =0.7mA, VDD = 20V, and voltage gain of 20DB,
what is the value of RS, and RD?
oVout
G
S
Vin (n
RG
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