Homework 4 02262022.docx.pdf - Adobe Reader File Edit View Window Help DOpen 1 / 3 200% - E B Tools Fill & Sign Comment 1. An n-type silicon sample has 1 x 1016 arsenic atoms, 1 x 1015 bulk recombination centers/cm³ and 1010 surface recombination centers/cm2. Click on Tools to convert V files to PDF. (a) Find bulk minority carrier lifetime, diffusion length and surface recombination velocity under low injection conditions. Values of op and Os are 3 x 10-15 cm? and 1 x 10-16 cm² respectively. Assume hole diffusion coefficient (Dp) to be = 9 cm?/s. (b) If the sample is illuminated with uniformly absorbed light that creates 5 x 1016 electron-hole pairs/cm³-s, what is the hole concentration at the surface? Hints for Q1(a): Use the equation for t, on slide 30 (lecture 8), Use the equation for Sir (surface recombination velocity) on slide 31 (lecture 8) Vth = 107 cm/sec 12:39 AM P Type here to search w] 26°C 04-Mar-22

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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1. An n-type silicon sample has 1 x 1016 arsenic atoms, 1 x 1015 bulk
recombination centers/cm3 and 1010 surface recombination centers/cm?.
Click on Tools to convert
files to PDF.
(a) Find bulk minority carrier lifetime, diffusion length and surface
recombination velocity under low injection conditions. Values of op and
Os are 3 x 10-15 cm? and 1 x 10-16 cm? respectively. Assume hole
diffusion coefficient (D,) to be = 9 cm?/s.
(b) If the sample is illuminated with uniformly absorbed light that
creates 5 x 1016 electron-hole pairs/cm-s, what is the hole concentration
3
at the surface?
Hints for Q1(a):
Use the equation for t, on slide 30 (lecture 8),
Use the equation for Sir (surface recombination velocity) on slide 31
(lecture 8)
Vth = 107 cm/sec
12:39 AM
Type here to search
26°C
W
04-Mar-22
Transcribed Image Text:I Homework 4 02262022.docx.pdf - Adobe Reader File Edit View Window Help / 3 Tools Fill & Sign Comment Оpen 1 200% IT 1. An n-type silicon sample has 1 x 1016 arsenic atoms, 1 x 1015 bulk recombination centers/cm3 and 1010 surface recombination centers/cm?. Click on Tools to convert files to PDF. (a) Find bulk minority carrier lifetime, diffusion length and surface recombination velocity under low injection conditions. Values of op and Os are 3 x 10-15 cm? and 1 x 10-16 cm? respectively. Assume hole diffusion coefficient (D,) to be = 9 cm?/s. (b) If the sample is illuminated with uniformly absorbed light that creates 5 x 1016 electron-hole pairs/cm-s, what is the hole concentration 3 at the surface? Hints for Q1(a): Use the equation for t, on slide 30 (lecture 8), Use the equation for Sir (surface recombination velocity) on slide 31 (lecture 8) Vth = 107 cm/sec 12:39 AM Type here to search 26°C W 04-Mar-22
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