Given the BJT amplifier circuit OVcc R1 Cc Is Rs Cc Vo Vs RE Ro' Vcc=18V, Rs=6802, R1=22KN, Rp=2.2KN, RĻ=6.8KN For transistor: Vbe=0.7V, B=hfe=125 (a) Determine the DC voltage VCE- (b) Determine hie. (c) Determine the equivalent resistance Ro' (d) Determine the current gain Ais=lo/Is. (e) Determine the voltage gain Avs=Vo/Vs

Given the BJT amplifier circuit OVcc R1 Cc Is Rs Cc Vo Vs RE Ro' Vcc=18V, Rs=6802, R1=22KN, Rp=2.2KN, RĻ=6.8KN For transistor: Vbe=0.7V, B=hfe=125 (a) Determine the DC voltage VCE- (b) Determine hie. (c) Determine the equivalent resistance Ro' (d) Determine the current gain Ais=lo/Is. (e) Determine the voltage gain Avs=Vo/Vs

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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True or False(a) The output Vo is in-phase with the input Vi if the cascaded amplifier consists of two common-emitteramplifier stages.(b) The current gain, voltage gain, and output impedance are all relatively high for a cascaded amplifier consisting of two common-emitter amplifier stages.(c) The input impedance and voltage gain of a common-emitter amplifier is higher if a bypass capacitor is connected across the emitter resistor.
(a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.
Q.1/ Figure below shows a CE power amplifier in which the collector resistor serves also as the load resistor. Assume Boc=Bac=100. a. Determines the de Q-point (Ico and VCEQ). b. Determine the voltage gain and the power gain. c. What changes would be necessary to convert the circuit to a pnp transistor with a positive supply? What advantage would this have? RL 100n 05 W LOk 22 uF RE 8.20 s00 mV pp 330 1O KHz 36 f1
Q3. V DD Rp Rp -O Up2 Upi O -Vss Here, H=450cm/V.s W=600µm Page 1 of 3
Two PNP transistors are connected to form a Darlington pair to create a single stage amplifier. Both transistors have the same B. Assume that is large such that 3+ 1 ~ B. Vcc 028² 028 9m2 RL 2+9m2 RL VIN PNP Darlington Pair Used as an Amplifier 1. If the Darlington pair is to be treated as a single transistor, what is the overall 3 if the "emitter current" is IOUT? OB² 9m2 Rp 1+9m2 RL RL 9m2 RL iOUT 2. Calculate the approximate expression for Ay. User1 and gm1 for the parameters of Q1 while 2 and for the parameters of Q2. Assume VA → ∞ for both transistors. 9m2 -9m2 RL 2 VOUT
QUESTION 5: A simplified class-AB output stage with BJTS is shown below. The circuit parameters are Vcc=15 V and R1 = 1900 2. For each transistor, Is= 9 x 10 ¬15 A. Determine the value of VBg that produces icn =ico=1 mA when vị= 0. What is the power dissipated in each transistor? Format : 2.7987275900068 VBB (V) Format : 62 Pon (mW)| (mW)| Format : 26 +Vcc icn VBB V BB 2 RL Qp lice -Vcc ww
A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1V
2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V
b) For correct operation as an ac amplifier a npn BJT must be correctly DC biased to establish an appropriate Q-point, i.e a negative voltage VBC between the base and collector terminals and a positive voltage VBE between the base and emitter terminals. Figure 3.1 shows a circuit that can achieve this requirement. Explain the role of each resistive element in this circuit. Vin RB1 Cin HH iin RB2 + Rc VB RE + Vcc Vc Cout VE ww 11 Figure 3.1 th Vout Ce İout
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
A. Determine the VCE transfer as a function of Vi of the circuit in figure 1, (eliminating the zener diode), indicating the different areas of the transistor (Active zone VBE = 0.7v, VCEsaturation = 0.2v, VBSaturation = 0.8v; saturation zone: The transistor has a B = 110 and the reverse saturation current negligible. B. As in section a) with the zener diode, assuming that this is ideal, whose zener voltage is equal to 3.5Volts. R3=8K, R4=9K
estion 2: Consider the BJT circuit given here. ( Write the input and output loop equations For the given values of Vcc= 10 V, Vin = 4V and resistor values, calculate all current values (IB, IC and IE) and VCE Assume that the ß for the transistor is 100 and the voltage drop across LED connected between Collector terminal and resistor (Rc) 2.1 V. TH i. ii. 111. VIN Vcc Rg=100 kΩ Re=2 kΩ LED 2.1 V B= 100 Based on the above analysis, correctly identify the current mode of operation Cutoff mode Active linear mode Saturation mode