Given a material with xm = 3.1 and within which B = 0.4y az T find: H, μ, μr, M, J, JB and JT

1. Given an ade of 0.998, determine Ic if IE=4 mA. 2. Determine ade if IE=2.8 mA and IB= 20 µA. 3. Find Ig if IB= 40 µA and ade is 0.98. 4. Given that ade = 0.987, determine the corresponding value of B. 5. Given Bde = 120, determine the corresponding value of a. 6. Given that Bde = 180 and Ic= 2.0 mA, find IE and IB. 7. A transistor has ICBO= 48 nA and a =0.992, find B and ICEO-

distance between plate is o 6 Mm and the dielectric 3.The capacitor having a plate area of o.lm the air.w hich of the fallowing is the capacitance of capacitor.

Q2) If Emin =3V and e. (t)=6sin(2nx105 t), fm =5KHZ, find Emax , Ec , Em , BW. Ptotal and draw the AM waveform for the following cases: 1) m=1.2 2) m=0.25 %3D

obtain Zatrans form Por the Followings XCS) SCS+1)

a) frid Dans for This periodie wave form Vo(k) b) find the porer burned in the load Re <) 2k=Rm c) Change the value of R to maximize P

1- A capacitor of parallel plates has a dielectric material of relative permittivity of 1.9 and the distance between the plates is 2.5X10° m. If the spacing is changed to 3.5 mm and the capacitance is to be unchanged, what is dielectric constant of a new material have to be replaced.

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1. For the given circuit, sketch the waveform for Q. CIk D Clk

1. Determine the Q-factor of a 4MHz crystal with the following values: L=100mH, R=100Ω, C=0.015pF, and mounting capacitance (Cm)=5pF. A. 24000B. 25000C. 26000D. 27000 2. Calculate the series-resonant frequency of the crystal described in #1. A. 4.1 MHzB. 225 kHzC. 224.74 kHzD. 5.12 MHz 3. Calculate the parallel-resonant frequency of the crystal described in #2. A. 4.12 MHzB. 224 kHzC. 310 kHzD. 3.66 MHz