Give the mathematical representation of a spherical wave travelling outward from a point and evaluate its probability current density.

Q: band structure for terestructure?

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Q: In a common emitter configuration, base current of 0.9 milliamperes and emitter current of 5.48…

A: For transistor, IE = IB + IC Here, IE = emittor current, = 5.48 mA IB = base current, = 0.9 mA Ic =…

Q: A 1000 pF capacitor is connected in series with a 2000 pF capacitor. Initially, the charges onthe…

A: The objective of this question is to understand the behavior of capacitors in a series circuit and…

Q: A bar of copper of (2cm) length and resistively of (1.8× 10-Nm) is connected to power supply of…

A: Given, Length of the copper bar (L) = 2 cm = 2×10-2 m. Resistivity of copper ρ=1.8×10-8 Ωm. The…

Q: Concisely discuss superconductivity using BSC theory

A: BCS stands for Bardeen, Cooper and Schrieffer. The BCS theory explains the superconductivity of only…

Q: The output SQNR of a 10-bit PCM was found to be insfficient at 30 dB. To achieve the desired SNR of…

A:

Q: Why does tunneling limit the miniaturization of MOSFETs?

A: The tunnelling limit the miniaturization of MOSFETS are explained as follows, The reverse bias…

Q: Consider a 100 ǺGaAs/AlGaAs quantum well where the electron effectivemass is 0.067m0. There are 2 x…

A: Given: 100A° GaAs/AlGaAs quantum well. The effective mass of an electron is, m*=0.067m0. Electron in…

Q: Calculate the reflection coefficient to be R and the penetration factor T for the voltage barrier…

A: Given: V(x)=0 if x<0 Region1Vo if x>0 Region 2 When E>Vo

Q: B) Calculate the reflection coefficient of the cavity reflectors for semiconductor laser with 500μm…

A: Given,L=500μmα=820/mgth=3000/m

Q: A long of radios a Copper wire free Sunfae chare wth is Slipped insiide plasric tube af inna The…

A:

Q: (a) What is the expected value of mean free time in a superconductor with zero resistivity? Justify…

A: a. The conductivity of the conductor is given by, σ=ne2zm   Here z is the mean free time. n is the…

Q: In a semiconcuctor sample subjected to the Hall experiment the velocity of the majority carriers was…

A: Given information: The velocity of majority charge carriers, v=2×106 cm/s The resistance of the…

Q: Implement the following multi-level function using fewest number of NAND gates only. Assume that all…

A: This is a boolean function. Boolean functions are built out of boolean variables which can take the…

Q: Hall effect data in an actual student laboratory was as follows: for a doped indium arsenide strip…

A: Given: The current is 100 mA=0.1 A The thickness is 0.15 mm=0.15*10-3 m The voltage is 11.5…

Q: VLSI design is done in top-down manner with adequate computer aided tools to do the job.…

A: VLSI stands for Very Large Scale Integration. The VLSI design follows the top-down approach. The…

Q: (Answer by true or false) In N-type the Fermi level rises to conduction band

A: In N-type the Fermi level rises to conduction band

Q: What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289^0

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Q: The probability current density to the wave function (x, t) = 2 e-14kx where k is a constant is: %3D

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Q: Problem 1: Consider the leaky capacitor shown in the figure above. Speci- fications are as follows:…

A: Given,A=3 cm2L=20 μmne=5×1026 particles/m3nh=5×1026 particles/m3

Q: Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic…

A: First of all, we have to write down the given conditions,  ni = 2×1016 electrons/m3Np = 3×1016…

Q: What is the average velocity in a current wire of d=10mm (carry a current of 1A),Assume that each…

A:

Q: diamagnetic expt Find Current density for and nis ne sneexp(e) as function of r the Cas e when. n…

A: Given: The number of electron and hole is given as ni = ne=n0 exp eϕkT n(r) = n0 exp -r2r02

Q: In a certain region of space there are electrons moving randomly. In any 1 µs time interval, the…

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Q: nt the egulvalent reststance ot teradnals 2termdnals an Jow: 10-2

A: The equivalent resistance between terminal a and b can be calculated by grouping the resistances in…

Q: A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer of GaAs that has an…

A: a) The power loss due to free-carrier absorption in a waveguide can be calculated using the…

Q: Discuss the current conduction in n-type and p-type conductors.

A: A small amount of a suitable impurity is added to the pure semiconductor; the conductivity of the…