Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb 95% of the incident red light = 700 nm. The complex refractive index of GaAs at this wavelength is given by ñGaAs = 3.77+ i0.141. By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage [%]
Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb 95% of the incident red light = 700 nm. The complex refractive index of GaAs at this wavelength is given by ñGaAs = 3.77+ i0.141. By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage [%]
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