Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb 95% of the incident red light = 700 nm. The complex refractive index of GaAs at this wavelength is given by ñGaAs = 3.77+ i0.141. By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage [%]

icon
Related questions
Question
Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb
95% of the incident red light
= 700 nm. The complex refractive index of GaAs at this wavelength is given by ñGaAs = 3.77+ i0.141. By what
fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal
reflector at the back? Give a percentage [%]
Transcribed Image Text:Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb 95% of the incident red light = 700 nm. The complex refractive index of GaAs at this wavelength is given by ñGaAs = 3.77+ i0.141. By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage [%]
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 5 steps with 4 images

Blurred answer