(g) Which of following values corresponds to the static power dissipation, Ps, of the MOSFET in the circuit shown in Figure 1.7 when Rp = 160 N, Vs= 10 V and vIN = 4 V? Assume that the MOSFET is operating in saturation and the drain-source current is given by the usual expression shown below where Vr=1 V and K = 1 mA/V?. K ips(sat) (Vos -V,) GS S D VIN RD Vo -Vs +. Vs Figure 1.7 (B) Ps=425 mW (A) Ps= 175 mW (D) Ps= 200 mW (C) Ps=250 mW +

(g) Which of following values corresponds to the static power dissipation, Ps, of the MOSFET in the circuit shown in Figure 1.7 when Rp = 160 N, Vs= 10 V and vIN = 4 V? Assume that the MOSFET is operating in saturation and the drain-source current is given by the usual expression shown below where Vr=1 V and K = 1 mA/V?. K ips(sat) (Vos -V,) GS S D VIN RD Vo -Vs +. Vs Figure 1.7 (B) Ps=425 mW (A) Ps= 175 mW (D) Ps= 200 mW (C) Ps=250 mW +

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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