For the transistor in Fig. P5.6, Is = 5 x 10-16 A, BF = 100, and BR = 0.25. (a) Label the collec- tor, base, and emitter terminals of the transistor. %3D (b) What is the transistor type? (c) Label the base- emitter and base-collector voltages, VBE and VBC, respectively, and label the normal directions for IE, Ic, and Ig. (d) What is the relationship between VBE and VBc? (e) Write the simplified form of the transport model equations that apply to this partic- ular circuit configuration. Write an expression for IE/IB. Write an expression for IE/Ic. (f) Find the values of IE, Ic, IB, VBC, and VBE.

For the transistor in Fig. P5.6, Is = 5 x 10-16 A, BF = 100, and BR = 0.25. (a) Label the collec- tor, base, and emitter terminals of the transistor. %3D (b) What is the transistor type? (c) Label the base- emitter and base-collector voltages, VBE and VBC, respectively, and label the normal directions for IE, Ic, and Ig. (d) What is the relationship between VBE and VBc? (e) Write the simplified form of the transport model equations that apply to this partic- ular circuit configuration. Write an expression for IE/IB. Write an expression for IE/Ic. (f) Find the values of IE, Ic, IB, VBC, and VBE.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Q5. Q1
D Question 4 Find the base and collector currents for each of the following two circuits. Assume a base- emitter voltage of 0.7. R1 1 Meg R1 1 Meg. R2 5k Q1 generic AND .op .model generic NPN(BF=100) R2 10k Q1 generic R3 10k + .op .model generic NPN(BF=100) Vcc Vcc 10.7 10.7
3.1 A transistor is biased at I, = 0.5 mA and has B. = 150. %3D a) Determine gm and r„ at room temperature. b) The input resistance hie = 7.6 kQ . Find rp. c) A load resistance R. = 2 kQ js used and the transistor is driven from a 300- source. Estimate the voltage gain. %3D
Please redraw and identiy the regions of operations in the plot. Then identify the region of operation of the transistor. Thank you!!
5 Rib Vs (E The following parameter for this transistor, VCC = 5V, RL = 4k2, RE = 3kN, R1 = 60kN, and R2 = 40k2, B = 100 and VA = 160. Determine: a. ICQ and VECQ, b. AV, c. Ai. d. Ro
Given IE(dc) = 1.2 mA, beta = 120 and ro = 40 kilo ohm, sketch the following: a. Common-emitter hybrid equivalent model b. Common-emitter re equivalent model c. Common-base hybrid equivalent model d. Common-base re equivalent model
don't solve it on a page. it gets difficult to see
Bipolar junction transistors (BJTS) are considered “normally-off" devices, because their natural state with no signal applied to the base is no . .between emitter and collector, like an open switch. *
Question: Compute the drian current flow IDS in PMOS transistor when Vd=0.9v , Vs=2v and Vg=0.5v assume the transistor W/l Ratio=?Hinds :=1 Question : For an channel MOSFET , if conduction perameter (kn) is 0.249 mA/v2 , drain to source voltage (vds) is VTN and gate to source voltage vgs is 2VTN where VTN=0.75v the current will be ?Hinds : =1
In r-parameter model the emitter resistance is smaller than the base resistance yet wekeep it and remove the replace the base resistance by a short circuit, explain why?
X=7, Y=0.
An NPN bipolar junction transistor having VB > VE and Vc = (VB - 400 mV) is: Select one: O a. Operating in saturation. O b. Operating in deep saturation. O c. Operating in active mode. O d. Operating at the edge of soft saturation. In order to operate in the active mode. annpn transistor must have VBE 0 and Vec Select one: Tue