18 VFor the self-bias configuration shown:RD 1.5 kIDQ(a) Sketch the transfer curve for the device.(b) Determine IDQ and VGSQ.(c) Calculate VDS and VD,(d) Calculate VG and Vs.IDSS - 10 mAVp - 4VVGSQ1M RGRs750

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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What is the W/L ratio required for an PMOStransistor to have an on-resistance of 2 k whenVGS = −5 V and VBS = 0? Assume VTP = −0.70 V.(b) Repeat for an NMOS transistor with VGS =+5 V and VBS = 0. Assume VTN = 0.70 V.
Discussion: (1) From your practical results, plot the drain characteristic curve for D-MOSFET and transfer characteristic curves for the two types of MOSFET transistors. (2) What is the difference between JFET and MOSFET transistors?. (3) What is the major difference in construction of the D-MOSFET and E- MOSFET?. (4) What does VT represent?. (5) How can E-MOSFET operate with absence of a physical channel? Explain the operation of it. (6) Choose the correct answer: a) Which one of the following transistors cannot operate with VGs=0. 1. JFET. 2. D-MOSFET. 3. E-MOSFET. b) If the VGs in an n-channel D-MOSFET is made more negative, the drain current will. 1. Increase. 2. Decrease. 3. Be zero. c) A MOSFET differs from JFET mainly because: 1. MOSFETs do not have a physical channel. 2. The JFET has a pn junction. 3. of the power rating. d) The n-channel D-MOSFET with a positive Vas is operating in: 1. The depletion mode. 2. The enhancement mode. 3. Saturation.
a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. c) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vas is positive. 2. VGs is negative. 3. VGS=0. d) A certain amplifier has an Rp 1K2. When a load resistance of 1K is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.
4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (V2) increasing in linear steps (e.g. Vg = 1 V, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lasat) occurs for each curve. Give this drain voltage (Va) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.
Discuss the gate drive circuit for power mosfet
1. The circuit shown in the figure is a/an a. XOR gate b. AND gate c. XNOR gate d. OR gate 2. From the circuit shown, if the inputs A and B are both 1, Q3 is/has a. in the active region b. saturated c. at cut-off d. a collector-emitter voltage equal to 0 V3. From the circuit shown, if the inputs A and B are 1 and 0 respectively, Q3 is/has a. at cut-off b. saturated c. in the active region d. a positive collector-base voltage4. From the circuit shown, if the inputs A and B are 0 and 1 respectively, Q5 is/has/will| a. a negative base-collector voltage b. a collector-emitter voltage approximately 0 V c. at cut-off d. cause the LED to turn off
a) How is the input characteristic of a common emitter BJT transistor measured? Input characteristic Draw . b) How is the output characteristic of the transistor measured? Describe and draw . c) Why is the transistor polarized as DC? What happens without DC polarity?
Topic: Field Effect Transistor For the given circuit, determine the parameters required in each below: a. Gate Voltage (VG) b. Drain Current (ID) c. Drain-Source Voltage (VDS) d. Gate-Source Voltage (VGS) e. Source Voltage (VS) f. What biasing method was utilized in the circuit? self bias, fixed bias, voltage divider bias, or source feedback bias?
Sketch and label the basic construction of the n- channel depletion type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and its symbol.
Determine the region of an NMOS transistor when Va = 6 V, Vs = 4 V, V, = 1, Vps = 0.5 V. O a. Cut-off region O b. Saturation region O. None of the options od. Triode region.
1- Draw the circuit symbol of NPN and PNP transistors for common collector configuration. 2- Illustrate the following: A. Define Biasing ? B. Write the three types of biasing circuit in Transistors and mention the main difference among them?
VDD = 5 V, and Rin = 500 k2. The transistor parameters are given as VTN1 = 0.7 V, VTP2 = -0.7 V, Kni = 0.4 mA/V?, Kp2 = 2 mA/V?, and A1 =12 = 0. (a) Design the circuit such that the current and voltage values at Q point are: Ipq1 = 0.3 mA, IDQ2 = 0.8 mA, VosQ1 = 3 V, and VpsQ2 = 4 V. The voltage across Rs1 is to be 0.5 V. (b) Draw the small-signal equivalent circuit of the amplifier. (c) Determine the small-signal voltage gain A, = Vo/Vi. %3D VDD Rs2 RD1 R1 Rin =Cs2 M1 M2 oVo Cc R2 Rs1 Cs1 Rp2 Vi (+

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For the self-bias configuration shown: (a) Sketch the transfer curve for the device. (b) Determine IDQ and VGSQ. (c) Calculate VDS and VD,