Homework Help is Here – Start Your Trial Now!
Engineering
Chemical Engineering
For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 μm below the surface is 6.60 x 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 101⁹ B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. °C T= i

For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 μm below the surface is 6.60 x 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 101⁹ B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. °C T= i

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
See similar textbooks
icon
Related questions
Question
For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 µm below the surface is 6.60 × 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 1019 B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. T = i °℃
Transcribed Image Text:For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 µm below the surface is 6.60 × 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 1019 B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. T = i °℃
Expert Solution
steps

Step by step

Solved in 3 steps with 3 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Recommended textbooks for you
Introduction to Chemical Engineering Thermodynami…
Introduction to Chemical Engineering Thermodynami…
Chemical Engineering
ISBN:
9781259696527
Author:
J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:
McGraw-Hill Education
Elementary Principles of Chemical Processes, Bind…
Elementary Principles of Chemical Processes, Bind…
Chemical Engineering
ISBN:
9781118431221
Author:
Richard M. Felder, Ronald W. Rousseau, Lisa G. Bullard
Publisher:
WILEY
Elements of Chemical Reaction Engineering (5th Ed…
Elements of Chemical Reaction Engineering (5th Ed…
Chemical Engineering
ISBN:
9780133887518
Author:
H. Scott Fogler
Publisher:
Prentice Hall
Process Dynamics and Control, 4e
Process Dynamics and Control, 4e
Chemical Engineering
ISBN:
9781119285915
Author:
Seborg
Publisher:
WILEY
Industrial Plastics: Theory and Applications
Industrial Plastics: Theory and Applications
Chemical Engineering
ISBN:
9781285061238
Author:
Lokensgard, Erik
Publisher:
Delmar Cengage Learning
Unit Operations of Chemical Engineering
Unit Operations of Chemical Engineering
Chemical Engineering
ISBN:
9780072848236
Author:
Warren McCabe, Julian C. Smith, Peter Harriott
Publisher:
McGraw-Hill Companies, The
SEE MORE TEXTBOOKS