For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 μm below the surface is 6.60 x 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 101⁹ B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. °C T= i
For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 μm below the surface is 6.60 x 1023 atoms/m³, compute the temperature at which the heat treatment is to be carried out. Assume the following: The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³. The background concentration (CB) is 5.0 x 101⁹ B atoms/m³. Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively. °C T= i
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Transcribed Image Text:For the predeposition heat treatment of a semiconducting device, boron atoms are to be diffused into silicon at an elevated
temperature for a period of 1.5 h. If the required concentration of B at a position 1.85 µm below the surface is 6.60 × 1023 atoms/m³,
compute the temperature at which the heat treatment is to be carried out. Assume the following:
The surface concentration of B is maintained at a constant level of 4.35 x 1025 atoms/m³.
The background concentration (CB) is 5.0 x 1019 B atoms/m³.
Activation energy and preexponential values are 3.59 eV/atom and 2.46 × 10-4 m²/s, respectively.
T =
i
°℃
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