For the NMOS M1 shown VTHN= 800 mV KPn= 120 uA/V², and (W/L) = (10/2), Draw the small signal equivalent circuit. Neglect the output resistance r, of the M1
For the NMOS M1 shown VTHN= 800 mV KPn= 120 uA/V², and (W/L) = (10/2), Draw the small signal equivalent circuit. Neglect the output resistance r, of the M1
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Please answer question 2 with details on how to do it. Please make handwriting legible. Thank you.

Transcribed Image Text:**Question 2:**
For the NMOS M1 shown, \(V_{THN} = 800 \, \text{mV}\), \(K_{Pn} = 120 \, \mu \text{A/V}^2\), and \((W/L) = (10/2)\), draw the small signal equivalent circuit. Neglect the output resistance \(r_o\) of the M1.
**Circuit Description:**
- The circuit features an NMOS transistor labeled as M1.
- \(R1\) is a resistor with a value of \(100k\) ohms connected to the drain of M1.
- The source of M1 is grounded.
- The gate of M1 is connected to an input labeled \(V_{in}\) through a node.
- The supply voltage \(V_{DD}\) is connected to the positive side of the circuit through a resistor.
- The transistor dimensions given are \(L = 2u\) and \(W = 10u\).
**Explanation:**
The instruction is to create a small-signal equivalent by substituting the transistor M1 with its small-signal model, considering the provided parameters and ignoring \(r_o\). This involves using the parameters to derive expressions typically for \(g_m\) (transconductance) based on the given values, and representing the AC components of the circuit that influence circuit behavior during small signal analysis.
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