For the common emitter BJT amplifier below, RB1= 12K Ohms, R82=2K Ohms, Rc=3.6K Ohns, Rg ro = infinity. = 910 Ohms, Vcc= 14 V, a of the Si transistor is 0.995 and +Vcc RC RB1 10 C2 +Vo(p-p) 10 uF Vce(p-p) 10 pF RB2 RE Determine the following using approximate method: i. AC dynamic emitter resistance, re ii. Input impedance of the amplifier, Zi iii. Thevenin's output impedance of the amplifier, Zo iv. Voltage gain of the amplifier, AVT

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For the comrmon emitter BJT amplifier below, Rai= 12K Ohms, R82=2K Ohms,
Rc = 3.6K Obns, Rg=910 Ohms, Vcc= 14 V, a of the Si transistor is 0.995 and
ro = infinity.
%3D
%3D
+Vcc
RCS
RB1
10
C2
+Vo(p-p)
10 uF
Vce(p-p)
input
10 uF
RB2
RE
Determine the following using approximate method:
i. AC dynamic emitter resistance, re
ii. Input impedance of the amplifier, Zi
iii. Thevenin's output impedance of the amplifier, Zo
iv. Voltage gain of the amplifier, AVT
Transcribed Image Text:For the comrmon emitter BJT amplifier below, Rai= 12K Ohms, R82=2K Ohms, Rc = 3.6K Obns, Rg=910 Ohms, Vcc= 14 V, a of the Si transistor is 0.995 and ro = infinity. %3D %3D +Vcc RCS RB1 10 C2 +Vo(p-p) 10 uF Vce(p-p) input 10 uF RB2 RE Determine the following using approximate method: i. AC dynamic emitter resistance, re ii. Input impedance of the amplifier, Zi iii. Thevenin's output impedance of the amplifier, Zo iv. Voltage gain of the amplifier, AVT
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