1. (a) An emitter follower as shown below should provide an input impedance of 2 kwith a gain of 0.75. Determine the required bias current (collector current) and RE,assuming ß= 80 and V₁= ∞o. (b) How does the gain change if considering the internalresistance Rs (not shown in the figure) of the signal source of 500 ?Vcc=2.5 VJVinQ₁WIREVout

Answered: Image /qna-images/answer/ba7433f4-b160-4f34-86d6-7805bd831a29.jpg

- (a) An emitter follower as shown below should provide an input impedance of 2 k with a gain of 0.75. Determine the required bias current (collector current) and RE, assuming ß= 80 and VA= ∞o. (b) How does the gain change if considering the internal resistance Rs (not shown in the figure) of the signal source of 500 ?

- (a) An emitter follower as shown below should provide an input impedance of 2 k with a gain of 0.75. Determine the required bias current (collector current) and RE, assuming ß= 80 and VA= ∞o. (b) How does the gain change if considering the internal resistance Rs (not shown in the figure) of the signal source of 500 ?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

In a full-bridge dc-dc converter using PWM bipolar voltage switching, analytically obtain the value of (V/V) which results in the maximum (peak-peak) ripple in the output current i,. Calculate this ripple in terms of Va, La, and f
URGENT All subparts
Draw an I/V characteristic diagram to connect the common emitter, indicating on it the operating point Q and the load line with simplified explanation.
Determine vo versus v₁ for the circuit shown in Figure 2. Assume that the MOSFET operates in saturation and is characterized by the parameters K and VT. Vs R₁ www Figure 2 wwww RL R₂ wwwww VO Note: assuming the MOSFET works at normal saturation regime and ips= (VDS -VT)²2 K 2
Q/ 1. Derive a mathematical expression to determine the stability factors of fixed-bias circuit?
a) Draw the energy band diagram of a MOSFET transistor, when -5 volts are applied to the drain contact. b) Explain what will happen to the Fermi level at the source contact and the drain contact in the following scenarios (Use an appropriate energy diagram to illustrate your answer): A positive voltage is applied to the drain contact. A positive voltage is applied to the source contact. c) Explain why current flow in a MOSFET transistor. Use a diagram to illustrate your answer.
Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.
pls i need the answer immediately 14
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
Please answer question a and b
I'll give a thumbs up. Pls. help me. ASAP
For the given circuit, Vcc = 19 volts, Rg = 900 KN, Rc = 8 KN, RE = 3 KN and B = 100. Assume Transistor is Silicon, VBE=0.7 volts. Vcc RC RB RE a. Compute for the base current Q-point, IBa (in Amperes) [ b. Compute for the collector current Q-point, Ica (in Amperes). c. Compute for the collector-to-emitter voltage, VCEQ (in Volts) d. Draw the Load Line, with details.'