For the Common emitter amplifier below the following are given: VCC = 15V hfe=150; R1 = 100k R2 = 20 k RC = 2 k RE= 5000 RL = 2 KO C1= 1uF hie=1.08 k (3 de C2 = 220uF C3= 0.32 UF Cwi 12pF, Cwo 10pF ■ Cbe = 15 pF, Cbc = 25pF VCC R₂ 82 KE Rc C1 at # º Determine the following: 1. Midband gain Av 2. Midband Total Voltage Gain Ar 3. Midband Total voltage Gain in dB Gr 4. Midband Total Current Gain Ar 5. Midband Total Current Gain in dB Gr 6. Low cut off frequency for C3 7. Low cut off frequency for C1 8. Low cut off frequency for C2 9. Low cut off frequency of the amplifier f 10. Miller's Capacitance CM LETE
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
MOSFET stands for Metal Oxide Silicone Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. It is a type of IGFET, which means Insulated Gate Field Effect Transistor. A MOSFET has four-terminals namely gate (G), drain (D), source (S), and body (B). The body of the MOSFET is connected to the source terminal and it forms a three-terminal device. It is used in both the analog and digital circuits.
Power MOSFET
The power MOSFET transistor structures are enhancement types. The voltage rating is enhanced in the enhancement-mode MOSFETs by the use of a drift layer. The MOSFET generally contains four layers. The middle layer is the p-type layer also known as the body, whereas the n-type layer is called the drift layer or region. The drift region decides the breakdown voltage, and hence it is the lightly doped region in power MOSFETs. The first and last layers are the n+ layers. The first layer and the last layers are the source and drain layers. The structure of N-channel MOSFET (e-MOSFET) is n+ p n- n+, but the shape of p-channel is the opposite doping shape.
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