FOr the Circuit Below.with kn(W/L) = 800μA/V², Vth =0.4V, lamda=0A) find Id for Vdd = 1.6VB) what is the minimum value for Vdd to ensure that NMOS is in saturation? This diagram illustrates an N-channel MOSFET transistor circuit. The circuit includes the following components:1. **MOSFET Transistor**: Positioned in the center, the MOSFET is a three-terminal device used for amplifying or switching electronic signals. It's shown with a gate, source, and drain. The arrow on the source indicates it's an N-channel MOSFET.2. **Resistor**: Located above the MOSFET, the resistor is labeled with a resistance of "1 KΩ" (1 kilo-ohm). It is connected in series with the drain terminal of the MOSFET and the voltage supply.3. **Voltage Supply**: At the top, there is a voltage symbol labeled as "V_DD," which represents the positive voltage supply connected to the drain of the MOSFET through the resistor.4. **Ground Connection**: The source of the MOSFET is connected to the ground, indicated by the ground symbol. In this configuration, the MOSFET can be used as a switch or amplifier, with the resistor serving to limit current and the voltage supply providing the necessary power for operation.

A) Since here Drain terminal is shorted with gate terminal , so system will operate in saturation mode. We can see in the given circuit In saturation mode , drain current will be ID=12μnCoxWLVGS-VT2ID=12KnWLVGS-VT2ID=12×800μ×VGS-VT2ID=400μVD-0.422.5kID=1.6-1kID-0.422.5kID=1.2-1kID22.5kID=1.44+kID2-2.4kID0=kID2-4.9kID+1.44ID=4.6mA, 0.3mA For device conduction, VGS≥VT1.6-1kID≥0.41.2≥1kID-----1Case 1Let ID=4.6mAThen equation 1 does not satisfy the condition, so ID will not be 4.6mA.Case 2Let ID=0.3mAThen equation 1 satisfy the condition, so ID will be 0.3mA ID=0.3mA b) Since here Drain terminal is shorted with gate terminal , so system will always operate in saturation mode only. But device should be ON. For device conduction VGS≥VTVDD-1kID≥0.4VDD≥0.4+1kIDVDD≥0.4+1k×0.3mVDD≥0.7V For device conduction, VDD should be greater than 0.7V.