For Si at 300° K, we have the following data: 1.02 x 1010 1.02 x 1016 n = intrinsic Pintrinsic 3 3 cm m EG 1.12 eV = 1.12 (1.602 x 10-19) J Nc = 2.8 x 1019 cm³ 3 2.8 x 1025 3 m Ny = 1.04 x 1019 cm³ 1.04 x 1025 m³ 3 Complete the following tables: (see notes, p 152-153) (Note: n>>p for all the n-type examples, p>>n for all the p-type examples, typical for devices) n-type: ND NA 'n 1015/cm³ 0 1016/cm³ 1017/cm³ 1018/cm³ p-type: n No No Мр 0 1015/cm³ 0 1016/cm³ 0 1017/cm³ 0 1018/cm³

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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For Si at 300° K, we have the following data:
1.02 x 1010
1.02 x 1016
n
=
intrinsic
Pintrinsic
3
3
cm
m
EG 1.12 eV = 1.12 (1.602 x 10-19) J
Nc
=
2.8 x 1019
cm³
3
2.8 x 1025
3
m
Ny
=
1.04 x 1019
cm³
1.04 x 1025
m³
3
Complete the following tables: (see notes, p 152-153)
(Note: n>>p for all the n-type examples, p>>n for all the p-type examples, typical for devices)
n-type:
ND
NA
'n
1015/cm³
0
1016/cm³
1017/cm³
1018/cm³
p-type:
n
No
No
Мр
0
1015/cm³
0
1016/cm³
0
1017/cm³
0
1018/cm³
Transcribed Image Text:For Si at 300° K, we have the following data: 1.02 x 1010 1.02 x 1016 n = intrinsic Pintrinsic 3 3 cm m EG 1.12 eV = 1.12 (1.602 x 10-19) J Nc = 2.8 x 1019 cm³ 3 2.8 x 1025 3 m Ny = 1.04 x 1019 cm³ 1.04 x 1025 m³ 3 Complete the following tables: (see notes, p 152-153) (Note: n>>p for all the n-type examples, p>>n for all the p-type examples, typical for devices) n-type: ND NA 'n 1015/cm³ 0 1016/cm³ 1017/cm³ 1018/cm³ p-type: n No No Мр 0 1015/cm³ 0 1016/cm³ 0 1017/cm³ 0 1018/cm³
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