For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT with probability 30%. ii. Repeat item i by using the Boltzmann approximation rather than the Fermi-Dirac distribution. iii. Find the difference in temperature between items i and i above and express this difference as percentage.
For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT with probability 30%. ii. Repeat item i by using the Boltzmann approximation rather than the Fermi-Dirac distribution. iii. Find the difference in temperature between items i and i above and express this difference as percentage.
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Transcribed Image Text:For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band
energy Ec. Let the absolute temperature T for items i and ii be 200 K.
i. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT with probability 30%.
ii. Repeat item i by using the Boltzmann approximation rather than the Fermi-Dirac distribution.
ii. Find the difference in temperature between items i and i above and express this difference
as percentage.
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