For a fixed bias circuit with given BJT transistor characteristics below: (a) Draw a load line on the characteristics determined by Vce = 21 V and Rc = 3K ohms for a fxed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of Re to establish the resulting operating point. (c) What are the resulting values of Ico and Vceo? (d) What is the value of B at the operating point? (e) What is the value of a defined by the operating point? () What is the saturation (Ica) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the dc power dissipated by the device at the operating point? ) What is the power supplied by Vcc? O Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and ().

For a fixed bias circuit with given BJT transistor characteristics below: (a) Draw a load line on the characteristics determined by Vce = 21 V and Rc = 3K ohms for a fxed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of Re to establish the resulting operating point. (c) What are the resulting values of Ico and Vceo? (d) What is the value of B at the operating point? (e) What is the value of a defined by the operating point? () What is the saturation (Ica) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the dc power dissipated by the device at the operating point? ) What is the power supplied by Vcc? O Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and ().

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

In saturation, what statement correctly describes the operation of a BJT transistor? Select one: a. No current flows through the transistor. Ob. There is a linear relationship between collector and base current. There is a nonlinear relationship between collector current and base current. d. There is an inverted but linear relationship between collector and base current. C.
Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
(iii), Why is the voltage-divider bias the preferred bias configuration? (iv) In a certain voltage-biased npn transistor, VB is 2.95 V. The DC emitter voltage is (a) 0.7 V (b) 2.95 V (c) 2.25 V (v) The emitter current is always (a) greater than the base current (b) less than the collector current (c) greater than the collector current (d) 3.65 V (d) answers (a) and (c)
Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing.
Q5. Derive the AC equivalent model for the common emitter fixed bias configuration. Mention the steps in derivation and show each stage clearly. Derive expression for Zi, Zo and Av. B E
an N.P.N transistor has a collector load of 1 ohms .it is used in a circuit with supply rails of 0v and 9v .wha is the maximum current that the transistor can conduct?
In BJT, the collector-emitter voltage once operating in saturation is a. 0.7 b. maximum c. equal to Vcc d. minimum
a.) Consider a two-BJT configuration in Figure 1. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V. Determine the minimum voltage VBE that will turn ON both Q1 and Q2. b.) Using the BJT small-signal model given in Figure 2, determine the AC current gain Ai = iout/iin for the circuit given in Figure 3. Assume ro >> rπ. You may assume that β is large.
Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.
Given NPN transistor, if the base current is 10mA and the emitter current is 600mA, what would be the (a) Collector current and (b) the ratio of collector & base current beta?
Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.
d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.