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Figure P2.47 gives the electron and hole concentra- tions in a 2-um-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 µm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V-s, respectively. 1.01 X 1018. 1016 x=0 E p(x) n(x) 1018 104 x=2 µm

Figure P2.47 gives the electron and hole concentra- tions in a 2-um-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 µm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V-s, respectively. 1.01 X 1018. 1016 x=0 E p(x) n(x) 1018 104 x=2 µm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Untitled document - Google Docs X ← → с https://docs.google.com/document/d/1GwQ1Wwe2FWPJw6pxcqiPqsA3PHjVT-wR89GVTq_N1dY/edit Search the menus (Alt+/) + Type here to search 100|- 1 100% O 1.01 X 1018. |2| 1016 Normal text Figure P2.47 gives the electron and hole concentra- tions in a 2-µm-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 μm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V. s, respectively. x=0 E Arial n(x) p(x) 11 1018 104 x=2 µm + BIUA 3 | 4 | 5 | 6 | 7 | 88% → 55°F o (8) 0 @ ID im 63 > =S ■ n 9:37 AM 10/17/2022 X : 1
Transcribed Image Text:Untitled document - Google Docs X ← → с https://docs.google.com/document/d/1GwQ1Wwe2FWPJw6pxcqiPqsA3PHjVT-wR89GVTq_N1dY/edit Search the menus (Alt+/) + Type here to search 100|- 1 100% O 1.01 X 1018. |2| 1016 Normal text Figure P2.47 gives the electron and hole concentra- tions in a 2-µm-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 μm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V. s, respectively. x=0 E Arial n(x) p(x) 11 1018 104 x=2 µm + BIUA 3 | 4 | 5 | 6 | 7 | 88% → 55°F o (8) 0 @ ID im 63 > =S ■ n 9:37 AM 10/17/2022 X : 1
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