Figure 1 shows graphs of n-channel E-MOSFET drain-feedback configuration together with its respective operating point. In order to stabilize the performance in low frequency, the feedback resistor that connected between gate and drain terminals are kept at a very large resistance (around Mega Ohms). To maximize the voltage gain, no resistor is connected between the source terminal and the ground. (i) With the aid of a diagram, design the circuit by finding all the resistance value so that it meets the requirement as stated in the graph. All resistance value must be in standard commercial value. (ii) What parameter affecting the Q-point of the configuration? (iii) How much the parameter you stated in (ii) need to be changed if we increase the VGSQ of the configuration to 9 V? Given that the ID(on) and VGS(on) are 2 mA and 6 V respectively.
Figure 1 shows graphs of n-channel E-MOSFET drain-feedback configuration together with its respective operating point. In order to stabilize the performance in low frequency, the feedback resistor that connected between gate and drain terminals are kept at a very large resistance (around Mega Ohms). To maximize the voltage gain, no resistor is connected between the source terminal and the ground.
(i) With the aid of a diagram, design the circuit by finding all the resistance value so that it meets the requirement as stated in the graph. All resistance value must be in standard commercial value.
(ii) What parameter affecting the Q-point of the configuration?
(iii) How much the parameter you stated in (ii) need to be changed if we increase the VGSQ of the configuration to 9 V? Given that the ID(on) and VGS(on) are 2 mA and 6 V respectively.
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