Figure 1 shows an n-channel metal-oxide-semiconductor field-effect transistor common- source circuit. The source resistor value is unknown. The transistor parameters are VTN = 0.8 V, Kn = 1 mA/V², and infinite output resistance is assumed while body effects can be neglected. Cc HH +5 V R = 30 ΚΩ R2 = 20 ΚΩ Figure 1 RD=30 k Rs - vo Cbypass 1. Design the circuit by finding the value of Rs if the specification for the drain current Quiescent point is IDQ=0.1 mA. Verify the assumption that the transistor is operating in saturation region. 2. If the closest standard value resistor of 9.1 kQ is chosen for Rs, the Q-point values IDQ and VDSQ will be shifted. Evaluate the change in the drain current if the standard value resistor is used. Verify that the transistor is still in saturation.

Figure 1 shows an n-channel metal-oxide-semiconductor field-effect transistor common- source circuit. The source resistor value is unknown. The transistor parameters are VTN = 0.8 V, Kn = 1 mA/V², and infinite output resistance is assumed while body effects can be neglected. Cc HH +5 V R = 30 ΚΩ R2 = 20 ΚΩ Figure 1 RD=30 k Rs - vo Cbypass 1. Design the circuit by finding the value of Rs if the specification for the drain current Quiescent point is IDQ=0.1 mA. Verify the assumption that the transistor is operating in saturation region. 2. If the closest standard value resistor of 9.1 kQ is chosen for Rs, the Q-point values IDQ and VDSQ will be shifted. Evaluate the change in the drain current if the standard value resistor is used. Verify that the transistor is still in saturation.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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