Exercise 6 Evaluate the density of charge carriers in intrinsic silicon at 300 K. We give Eg = 1.12eV, mi = 0.98m, mi = 0.19m, min 0.19m, min = 0.49m. Knowing that 0.16m, mhh = 0.16m, mhh 3/2 m² = (6) 2/3 (mimi2) ¹/3, m₁ = (min/² + m3/2) and 3/4 3/4 - (2.5 (¹* () ()¹/² exp(-)) 109 cm³. Eg n₁ = 300, Calculate the concentration of charge carriers at T = 300 K in silicon doped with 1016 arsenic atoms per cm³ if n₁ = 1.45x10¹0 cm-³.

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Exercise 6

Exercise 4
A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing
that the electron concentration is 8.45x1028 m-3, determine the rate at which the
electrons are drawn. It is assumed that the wire is 2.5 m long and that it is
subjected to a potential difference of 0.1 V. Then calculate the mobility of the
electrons and deduce the conductivity of the wire.
Exercise 5
We consider a germanium crystal of type P, resistivity 0.01 2. cm at 27 °C. We
recall that for such a temperature, the intrinsic concentration is given by the
law n₁ = AT³/² exp(-), with A = 10²2. The mobility of the holes is then
0.17 S.I. Recall that k = 1.38x10-23 S.I.
1. Calculate the hole concentration;
2. Deduce the concentration of free electrons
3. Repeat the calculations of questions a) and b) for a germanium crystal
with resistivity 10.0 2. cm.
Exercise 6
Evaluate the density of charge carriers in intrinsic silicon at 300 K. We give
Eg = 1.12eV, mi = 0.98m, m = 0.19m, min = 0.16m, mhh = 0.49m. Knowing that
me = (6) 2/3 (mim²) ¹/3, mi
(mi2/2 + m3/2)2/3 and
+3/2
3/4
3/4
- (2.5 (³)
n₁ =
2K)) 10
Eg
3/2
Т
(T)³7² exp(-2KBT)
1019 cm-3.
Calculate the concentration of charge carriers at T = 300 K in silicon doped
with 1016 arsenic atoms per cm³ if n = 1.45x10¹0 cm-³.
Transcribed Image Text:Exercise 4 A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing that the electron concentration is 8.45x1028 m-3, determine the rate at which the electrons are drawn. It is assumed that the wire is 2.5 m long and that it is subjected to a potential difference of 0.1 V. Then calculate the mobility of the electrons and deduce the conductivity of the wire. Exercise 5 We consider a germanium crystal of type P, resistivity 0.01 2. cm at 27 °C. We recall that for such a temperature, the intrinsic concentration is given by the law n₁ = AT³/² exp(-), with A = 10²2. The mobility of the holes is then 0.17 S.I. Recall that k = 1.38x10-23 S.I. 1. Calculate the hole concentration; 2. Deduce the concentration of free electrons 3. Repeat the calculations of questions a) and b) for a germanium crystal with resistivity 10.0 2. cm. Exercise 6 Evaluate the density of charge carriers in intrinsic silicon at 300 K. We give Eg = 1.12eV, mi = 0.98m, m = 0.19m, min = 0.16m, mhh = 0.49m. Knowing that me = (6) 2/3 (mim²) ¹/3, mi (mi2/2 + m3/2)2/3 and +3/2 3/4 3/4 - (2.5 (³) n₁ = 2K)) 10 Eg 3/2 Т (T)³7² exp(-2KBT) 1019 cm-3. Calculate the concentration of charge carriers at T = 300 K in silicon doped with 1016 arsenic atoms per cm³ if n = 1.45x10¹0 cm-³.
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