enter is located near the center of the ban direct band gap semiconductor. -Fermi level is applied to non-equilibrium ity carrier diffusion equation is used whe

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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1. True or False
4) R-G center is located near the center of the bandgap.
5) Si is a direct band gap semiconductor.
6) Quasi-Fermi level is applied to non-equilibrium condition.
7) Minority carrier diffusion equation is used when the voltage is applied on the device.
8) A diffusion gradient creates an electric field.
9) Low-level injection conditions prevail when An<<n, in an n-type material.
(True or False)
(True or False)
(True or False)
(True or False)
(True or False)
(True or False)
10) The continuity equation can be simplified to An
a²An An
D,
for the majority carrier. (True or False)
+ G
Transcribed Image Text:1. True or False 4) R-G center is located near the center of the bandgap. 5) Si is a direct band gap semiconductor. 6) Quasi-Fermi level is applied to non-equilibrium condition. 7) Minority carrier diffusion equation is used when the voltage is applied on the device. 8) A diffusion gradient creates an electric field. 9) Low-level injection conditions prevail when An<<n, in an n-type material. (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) 10) The continuity equation can be simplified to An a²An An D, for the majority carrier. (True or False) + G
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