energy gap in Ge is lower thân Si. because:

College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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il adle nd
E Quit any (3) questi X
LA Meet gon-
M New announceme X
FAlpQLSczdNr4v000oU7kDw_x1-Rdc-LR8aqZml5Q1OrvrQnH57Jly/formResponse
Voltage barrier is present on:
O intrinsic semiconductor
O doped semiconductor
O both
energy gap in Ge is lower than si, because:
O the distance between hucleus and valance shell in Ge is lower than in St.
O the distance between nucleus and valance shell in Ce is larger than in St
O the Go has few valance electron than S
O Non of the above
The blasing in diode is needed to make it
O conduct current
O cutoff current
O both
f10
144
Transcribed Image Text:il adle nd E Quit any (3) questi X LA Meet gon- M New announceme X FAlpQLSczdNr4v000oU7kDw_x1-Rdc-LR8aqZml5Q1OrvrQnH57Jly/formResponse Voltage barrier is present on: O intrinsic semiconductor O doped semiconductor O both energy gap in Ge is lower than si, because: O the distance between hucleus and valance shell in Ge is lower than in St. O the distance between nucleus and valance shell in Ce is larger than in St O the Go has few valance electron than S O Non of the above The blasing in diode is needed to make it O conduct current O cutoff current O both f10 144
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