Determine the level of V, Si Ge R1 E R2 Given : • The Si diode turn on voltage is = 0.65 V • The Ge diode turn on voltage is = 0.35 V • The source voltage E = 12 V • R = 7.5 K2 • R2 = 3.5 K then: • The Si diode is Forward Biased : • The Ge diode is Forward Biased • The Current through R1 = mA • The output voltage V, = • Power consumed by Si Diode Psi mW

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Determine the level of Vo
Si
Ge
R1
Vo
E
R2
Given :
• The Si diode turn on voltage is = 0.65 V
• The Ge diode turn on voltage is = 0.35 V
• The source voltage E = 12 V
• R = 7.5 K
• R2 = 3.5 K 2
%3D
then:
• The Si diode is Forward Biased :
• The Ge diode is Forward Biased +
• The Current through R1 =
• The output voltage V, =
• Power consumed by Si Diode Psi
%3D
mA
V
mW
Transcribed Image Text:Determine the level of Vo Si Ge R1 Vo E R2 Given : • The Si diode turn on voltage is = 0.65 V • The Ge diode turn on voltage is = 0.35 V • The source voltage E = 12 V • R = 7.5 K • R2 = 3.5 K 2 %3D then: • The Si diode is Forward Biased : • The Ge diode is Forward Biased + • The Current through R1 = • The output voltage V, = • Power consumed by Si Diode Psi %3D mA V mW
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