Determine the drain current, ID. + O a. 1.23 mA O b. 4.32 mA О с. 6.22 mA O d. 5.25 mA VGS 1 ΜΩ S D VDD == 16 V RD:=2 kn IDSS=10 mA VGG = -2 V Vp:=-8 V
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- Given the following circuit with VDD = 9.5 V, R = 3.2 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. VDD I a. 0 A O b. 0.002766 A c. 0.002969 A d. 2.968750 A e. 2.765625 A R N V₂Given the following circuit with VDD= 9.2 V, R=2.3 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. I VDD a. 0.004000 A O b. 3.717391 A OC. 0 A d. 4.000000 A e. 0.003717 A R + VD -For the circuit shown in the Figure, if the diodes are silicon diodes with Vp(on)=0.7 V, and VIN=50 sin wt V, V1 =6 V and V2 = 16 V, then the value of VouTP-p) is: R, D VaN Vout v1事 2章 Oa. 25.4 V Ob. 27.4 V Oc. 29.4 V Od. 23.4 V
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditionalThe cut-in voltage for each diode in the circuits shown in Figure Pl.30 is V, = 0.6 V. For each circuit, determine the diode current I, and the voltage Vo (mea- sured with respect to ground potential). Q7 R= 10 k2 Vo oVo Ip R= 10 k2 5 V 5V 5 V 5 V (a) (b) R= 10 k2 Vo 5V E 5 V (c)
- The input to a full-wave rectifier is 30 V AC (RMS). The load resistor is 10 ohms. The DC power at the output is: O A. 73 W O B. 18 W C. None of the other choices are correct D. 36 W O E. 146 WDetermine which diodes are forward-biased and which are reverse-biased in the configurations.. Assuming a 0.7-V drop across each forward-biased diode, determine the output voltage.Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1
- B\ Assume D1 and D2 are Si diodes. Find ID1. ID2, VD1, VD2 and IO in the circuit below, the practical model. Ip: 512 +Vpi- lo 3 A 10 V 2Vais.Design a voltage regulator that will maintain an output voltage of 20 V across a 1-k-ohm load with an input that will vary between 25 V and 40 V. Then, Calculate; a. value of resistor R in ohm b. value of IRmax in ohm c. value of IL in mA d. value of IZM in mAFor the circuit in the figure, let V input = 8V, Ri = 12ohms, RL = 10ohms, and VZ = 3.3V. Determine the voltages and currents of the resistors and the current of the zener diode.