Determine the drain current, ID. + O a. 1.23 mA O b. 4.32 mA О с. 6.22 mA O d. 5.25 mA VGS 1 ΜΩ S D VDD == 16 V RD:=2 kn IDSS=10 mA VGG = -2 V Vp:=-8 V
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- Given the following circuit with VDD = 9.5 V, R = 3.2 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. VDD I a. 0 A O b. 0.002766 A c. 0.002969 A d. 2.968750 A e. 2.765625 A R N V₂Given the following circuit with VDD= 9.2 V, R=2.3 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. I VDD a. 0.004000 A O b. 3.717391 A OC. 0 A d. 4.000000 A e. 0.003717 A R + VD -For the circuit shown in the Figure, if the diodes are silicon diodes with Vp(on)=0.7 V, and VIN=50 sin wt V, V1 =6 V and V2 = 16 V, then the value of VouTP-p) is: R, D VaN Vout v1事 2章 Oa. 25.4 V Ob. 27.4 V Oc. 29.4 V Od. 23.4 V
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditionalThe cut-in voltage for each diode in the circuits shown in Figure Pl.30 is V, = 0.6 V. For each circuit, determine the diode current I, and the voltage Vo (mea- sured with respect to ground potential). Q7 R= 10 k2 Vo oVo Ip R= 10 k2 5 V 5V 5 V 5 V (a) (b) R= 10 k2 Vo 5V E 5 V (c)
- 4. (2,5) For the circuit in Figure 01: (a) Determine VOUT at IZK and at Izm. (b) Calculate the value ofR that should be used. (c) Determine the minimum value of RL that can be used. Obs. The IN4744A zener used in the regulator circuit of Figure 01 is a 15 V diode The datasheet gives the following information: Vz = 15 V @ Iz = 17 mA, IzK = 0.25 mA, and Zz = 14 Q. (resistência de corpo). R VOUT + VIN IN4744A RL 24 VDetermine which diodes are forward-biased and which are reverse-biased in the configurations.. Assuming a 0.7-V drop across each forward-biased diode, determine the output voltage.Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1
- B\ Assume D1 and D2 are Si diodes. Find ID1. ID2, VD1, VD2 and IO in the circuit below, the practical model. Ip: 512 +Vpi- lo 3 A 10 V 2Vais.Design a voltage regulator that will maintain an output voltage of 20 V across a 1-k-ohm load with an input that will vary between 25 V and 40 V. Then, Calculate; a. value of resistor R in ohm b. value of IRmax in ohm c. value of IL in mA d. value of IZM in mAFor the circuit in the figure, let V input = 8V, Ri = 12ohms, RL = 10ohms, and VZ = 3.3V. Determine the voltages and currents of the resistors and the current of the zener diode.