Determine the drain current, ID. + O a. 1.23 mA O b. 4.32 mA О с. 6.22 mA O d. 5.25 mA VGS 1 ΜΩ S D VDD == 16 V RD:=2 kn IDSS=10 mA VGG = -2 V Vp:=-8 V
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- In the circuit shown below. Determine the following a. Vs (at the secondary) b. Vout (across RL) c. Vrip (ripple votage) d. VDC e. PIV (Peak Inverse Voltage) 10:1 Output 115 V mis 60 Hz RL 2.2 k) D, 50μF- All diodes are IN4001. Tund AlMannai EENG261 Page 5/11Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI asQ-3. Draw 1-V characteristics of 5 V silicon zener diode (Vz-5V) and show its parameters V Vz, Izx. Izs, Izm on the curve. Q-4. Determine the range of Road (Rmin, Rmax) that will maintain Vz at 5 volts for the circuit given below. Rs m 1.0kg V1 40 V Pzm=150mw
- PLEASE ANSWER THIS MCQGiven the following circuit with VDD = 9.5 V, R = 3.2 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. VDD I a. 0 A O b. 0.002766 A c. 0.002969 A d. 2.968750 A e. 2.765625 A R N V₂Given the following circuit with VDD= 9.2 V, R=2.3 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. I VDD a. 0.004000 A O b. 3.717391 A OC. 0 A d. 4.000000 A e. 0.003717 A R + VD -
- Given the following circuit with VDD = 9.5 V, R = 3.2 kn, then the current Iis: Use the CVD model for the diode, with Vp= 0.65 V. VDR I a. 2.968750 A b. 0 A c. 0.002766 A d. 0.002969 A e. 2.765625 A R ww + VoFor the circuit shown in the Figure, if the diodes are silicon diodes with Vp(on)=0.7 V, and VIN=50 sin wt V, V1 =6 V and V2 = 16 V, then the value of VouTP-p) is: R, D VaN Vout v1事 2章 Oa. 25.4 V Ob. 27.4 V Oc. 29.4 V Od. 23.4 VFor the ideal-diode clipper circuit given below, VS = 12.sinwt V. a. Determine the output voltage Vout and sketch this function. b. Remove the short circuit between points x and y, and replace it with a 2k2 Resistor. Find the range of values of VS for; D1 and D2 are OFF D1 is ON and D2 is OFF D1 is OFF and D2 is ON Is it possible for both D1 and D2 to be ON? y 1kO 3V D2 VS 3kQ. Vout D1 6V
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…Power supply circuit is delivering 0.5 A and an average voltage 20 V to the load as shown in the circuit below. The ripple voltage of the half wave rectifier is 0.5 V and the diode is represented using constant voltage model. The smoothing capacitor value is equal to 220V rmsh soHz} VL-DC =20V 0.01 F 0.02 F 0.0167 F None of the aboveExcept for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditional