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Design the circuit in Fig. 5.23 to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source at this operating point? Let V = 0.5 V and k(WIL) = 2 mA/V². VDD = +2 V Ip RD - VD +0.1 V Figure 5.23 Circuit for Example 5.5. Solution Since the drain voltage is lower than the gate voltage by 1.9 V and V = 0.5 V, the MOSFET is operating in the triode region. Thus the current I,, is given by ID=k- W (VGS-VI) VDS- 1=2x [(2-0.5) × 0.1-0.01]=0.29 mA Example 5.5 continued The required value for R, can be found as follows: R₁ = VDD-VD 2-0.1 ID 0.29 = 6.55 ΚΩ In a practical discrete-circuit design problem, one selects the closest standard value available for, say, 5% resistors in this case, 6.8 k2 (see Appendix J). Since the transistor is operating in the triode region with a small Vos, the effective drain-to-source resistance can be determined as follows: DS= Vps 0.1V ID 0.29mA Alternatively, we can determine rps by using the formula = 34592 to obtain 1 TDS= k₁Vov 1 DS= = 0.333 ΚΩ = 333 Ω 2x (2-0.5) which is close to the value found above.

Design the circuit in Fig. 5.23 to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source at this operating point? Let V = 0.5 V and k(WIL) = 2 mA/V². VDD = +2 V Ip RD - VD +0.1 V Figure 5.23 Circuit for Example 5.5. Solution Since the drain voltage is lower than the gate voltage by 1.9 V and V = 0.5 V, the MOSFET is operating in the triode region. Thus the current I,, is given by ID=k- W (VGS-VI) VDS- 1=2x [(2-0.5) × 0.1-0.01]=0.29 mA Example 5.5 continued The required value for R, can be found as follows: R₁ = VDD-VD 2-0.1 ID 0.29 = 6.55 ΚΩ In a practical discrete-circuit design problem, one selects the closest standard value available for, say, 5% resistors in this case, 6.8 k2 (see Appendix J). Since the transistor is operating in the triode region with a small Vos, the effective drain-to-source resistance can be determined as follows: DS= Vps 0.1V ID 0.29mA Alternatively, we can determine rps by using the formula = 34592 to obtain 1 TDS= k₁Vov 1 DS= = 0.333 ΚΩ = 333 Ω 2x (2-0.5) which is close to the value found above.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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If in the circuit of Example 5.5 the value of R, is doubled (to 13.1 k52), find approximate values for I, and V» Ans. 0.15 mA: 0.05 V Need work
Design the circuit in Fig. 5.23 to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source at this operating point? Let V = 0.5 V and k(WIL) = 2 mA/V². VDD = +2 V Ip RD - V₁ = +0.1 V Figure 5.23 Circuit for Example 5.5. Solution Since the drain voltage is lower than the gate voltage by 1.9 V and V = 0.5 V, the MOSFET is operating in the triode region. Thus the current I, is given by W 2x [(2-0.5) × 0.1-0.01]- = 0.29 mA Example 5.5 continued The required value for R, can be found as follows: RD V-VD 2-0.1 ID 0.29 - 6.55 ΚΩ In a practical discrete-circuit design problem, one selects the closest standard value available for, say, 5% resistors in this case, 6.8 k₁2 (see Appendix J). Since the transistor is operating in the triode region with a small Vos, the effective drain-to-source resistance can be determined as follows: DS V DS= 0.1V 1 0.29mA = 3452 Alternatively, we can determine rps by using the formula to obtain 1 k₂Vov 1 = 0.333 ΚΩ = 333 Ω ps 2x (2-0.5) which is close to the value found above.
Transcribed Image Text:Design the circuit in Fig. 5.23 to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source at this operating point? Let V = 0.5 V and k(WIL) = 2 mA/V². VDD = +2 V Ip RD - V₁ = +0.1 V Figure 5.23 Circuit for Example 5.5. Solution Since the drain voltage is lower than the gate voltage by 1.9 V and V = 0.5 V, the MOSFET is operating in the triode region. Thus the current I, is given by W 2x [(2-0.5) × 0.1-0.01]- = 0.29 mA Example 5.5 continued The required value for R, can be found as follows: RD V-VD 2-0.1 ID 0.29 - 6.55 ΚΩ In a practical discrete-circuit design problem, one selects the closest standard value available for, say, 5% resistors in this case, 6.8 k₁2 (see Appendix J). Since the transistor is operating in the triode region with a small Vos, the effective drain-to-source resistance can be determined as follows: DS V DS= 0.1V 1 0.29mA = 3452 Alternatively, we can determine rps by using the formula to obtain 1 k₂Vov 1 = 0.333 ΚΩ = 333 Ω ps 2x (2-0.5) which is close to the value found above.
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