Describe the differences between PROM and EEPROM memory products and state the type of applications for which each is best suited, including the underlying physical reasons why each product is best suited to a particular task. Q7 (a) (b) Figure Q7 shows a design for a 16x1bit SRAM module. i) Explain why this is a poor design and sketch the structure of a more practical design for this RAM module. ii) How many gates are saved in the decoder circuitry by your enhanced design, and how many gates would be saved if the module were a 1Mx1bit SRAM? iii) What are the disadvantages of your design approach? A IMx4bit DRAM module (of optimal internal design) requires each cell to be refreshed every 64 ms. Refresh for one row takes 60 ns. What fraction of the operating time of the device is lost in refreshing the memory cells? (c) Datain IN OUT SEL g WR АЗ A2 A1 IN OUTH SEL d WR A0 - IN OUTH SEL WR IN OUTH SEL d WR RW CS Dataout Figure Q7
Describe the differences between PROM and EEPROM memory products and state the type of applications for which each is best suited, including the underlying physical reasons why each product is best suited to a particular task. Q7 (a) (b) Figure Q7 shows a design for a 16x1bit SRAM module. i) Explain why this is a poor design and sketch the structure of a more practical design for this RAM module. ii) How many gates are saved in the decoder circuitry by your enhanced design, and how many gates would be saved if the module were a 1Mx1bit SRAM? iii) What are the disadvantages of your design approach? A IMx4bit DRAM module (of optimal internal design) requires each cell to be refreshed every 64 ms. Refresh for one row takes 60 ns. What fraction of the operating time of the device is lost in refreshing the memory cells? (c) Datain IN OUT SEL g WR АЗ A2 A1 IN OUTH SEL d WR A0 - IN OUTH SEL WR IN OUTH SEL d WR RW CS Dataout Figure Q7
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
Related questions
Question
![Describe the differences between PROM and EEPROM memory products and
state the type of applications for which each is best suited, including the
underlying physical reasons why each product is best suited to a particular task.
Q7
(a)
(b)
Figure Q7 shows a design for a 16x1bit SRAM module.
i)
Explain why this is a poor design and sketch the structure of a more
practical design for this RAM module.
ii)
How many gates are saved in the decoder circuitry by your enhanced
design, and how many gates would be saved if the module were a
1Mx1bit SRAM?
iii)
What are the disadvantages of your design approach?
A IMx4bit DRAM module (of optimal internal design) requires each cell to be
refreshed every 64 ms. Refresh for one row takes 60 ns. What fraction of the
operating time of the device is lost in refreshing the memory cells?
(c)
Datain
IN OUT
SEL
WR
1
IN OUT
АЗ
A2
A1
A0 - 2
SEL
-q WR
IN OUTH
SEL
WR
OUTH
SEL
d WR
IN
R/W
CS
Dataout
Figure Q7](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F8e8ba70a-b455-4e03-8fde-f9209a556052%2Ffc030362-6628-4747-8ba7-a9c5416c6404%2F8gu6lcp_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Describe the differences between PROM and EEPROM memory products and
state the type of applications for which each is best suited, including the
underlying physical reasons why each product is best suited to a particular task.
Q7
(a)
(b)
Figure Q7 shows a design for a 16x1bit SRAM module.
i)
Explain why this is a poor design and sketch the structure of a more
practical design for this RAM module.
ii)
How many gates are saved in the decoder circuitry by your enhanced
design, and how many gates would be saved if the module were a
1Mx1bit SRAM?
iii)
What are the disadvantages of your design approach?
A IMx4bit DRAM module (of optimal internal design) requires each cell to be
refreshed every 64 ms. Refresh for one row takes 60 ns. What fraction of the
operating time of the device is lost in refreshing the memory cells?
(c)
Datain
IN OUT
SEL
WR
1
IN OUT
АЗ
A2
A1
A0 - 2
SEL
-q WR
IN OUTH
SEL
WR
OUTH
SEL
d WR
IN
R/W
CS
Dataout
Figure Q7
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