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Delta doping is a process used in advanced GaAs fabrication to increase the Schottky barrier height of the gate electrode. This reduces the gate electrode leakage. Delta doping is done by depositing a monolayer of a p-type dopant material directly between the gate electrode and the GaAs. Assume that the atomic surface coverage is 1.5 x 10¹5 cm2 and that the dopant is beryllium. After the gate patterning, the source/drain is annealed at 800°C for 10 min to activate the impurity. (a) If the gate material prevents any outdiffusion from the wafer, use first-order diffusion theory to calculate the junction depth if the channel is doped 1 x 10¹7 cm 3 n-type. (b) What surface concentration of Be will result? (c) Sketch the profile that you calculated using this simple theory, and the profile that might actually be expected. Briefly list two reasons for the difference.

Delta doping is a process used in advanced GaAs fabrication to increase the Schottky barrier height of the gate electrode. This reduces the gate electrode leakage. Delta doping is done by depositing a monolayer of a p-type dopant material directly between the gate electrode and the GaAs. Assume that the atomic surface coverage is 1.5 x 10¹5 cm2 and that the dopant is beryllium. After the gate patterning, the source/drain is annealed at 800°C for 10 min to activate the impurity. (a) If the gate material prevents any outdiffusion from the wafer, use first-order diffusion theory to calculate the junction depth if the channel is doped 1 x 10¹7 cm 3 n-type. (b) What surface concentration of Be will result? (c) Sketch the profile that you calculated using this simple theory, and the profile that might actually be expected. Briefly list two reasons for the difference.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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- Delta doping is a process used in advanced GaAs fabrication to increase the Schottky barrier height of the gate electrode. This reduces the gate electrode leakage. Delta doping is done by depositing a monolayer of a p-type dopant material directly between the gate electrode and the GaAs. Assume that the atomic surface coverage is 1.5 x 10¹5 em 2 and that the dopant is beryllium. After the gate patterning, the source/drain is annealed at 800°C for 10 min to activate the impurity. (a) If the gate material prevents any outdiffusion from the wafer, use first-order diffusion theory to calculate the junction depth if the channel is doped 1 x 1017 cm 3 n-type. (b) What surface concentration of Be will result? (c) Sketch the profile that you calculated using this simple theory, and the profile that might actually be expected. Briefly list two reasons for the difference.
Transcribed Image Text:- Delta doping is a process used in advanced GaAs fabrication to increase the Schottky barrier height of the gate electrode. This reduces the gate electrode leakage. Delta doping is done by depositing a monolayer of a p-type dopant material directly between the gate electrode and the GaAs. Assume that the atomic surface coverage is 1.5 x 10¹5 em 2 and that the dopant is beryllium. After the gate patterning, the source/drain is annealed at 800°C for 10 min to activate the impurity. (a) If the gate material prevents any outdiffusion from the wafer, use first-order diffusion theory to calculate the junction depth if the channel is doped 1 x 1017 cm 3 n-type. (b) What surface concentration of Be will result? (c) Sketch the profile that you calculated using this simple theory, and the profile that might actually be expected. Briefly list two reasons for the difference.
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