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D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by p. 750 sech 10xx tanh zxC/m'. The dielectric constant of the semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo: (b) C; (c) E at the junction. Ans. 2.70 V; 8.85 pF; 2.70 MV/m

D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by p. 750 sech 10xx tanh zxC/m'. The dielectric constant of the semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo: (b) C; (c) E at the junction. Ans. 2.70 V; 8.85 pF; 2.70 MV/m

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by P = 750 sech 10 r.x tanh 7xC/m. The dielectric constant of the semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo; (b) C; (c) E at the junction. Ans. 2.70 V; 8.85 pF; 2.70 MV/m
Transcribed Image Text:D7.4. In the neighborhood of a certain semiconductor junction the volume charge density is given by P = 750 sech 10 r.x tanh 7xC/m. The dielectric constant of the semiconductor material is 10 and the junction area is 2 x 10-7 m2. Find: (a) Vo; (b) C; (c) E at the junction. Ans. 2.70 V; 8.85 pF; 2.70 MV/m
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